Journal ArticleDOI
Preparation and properties of transparent conducting indium tin oxide films deposited by reactive evaporation
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TLDR
In this paper, high-resistance polycrystalline conducting indium tin oxide (ITO) films have been prepared on glass substrates by reactively evaporating In-Sn alloy in a system with an oxygen partial pressure of (1-2) × 10−4 Torr and a substrate temperature between 100 and 320 °C, and the average transmittance reached 95% for a film 175 nm thick in the wavelength range of the visible spectrum.About:
This article is published in Thin Solid Films.The article was published on 1995-07-01. It has received 43 citations till now. The article focuses on the topics: Indium tin oxide & Evaporation (deposition).read more
Citations
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Journal ArticleDOI
Scattering mechanisms of charge carriers in transparent conducting oxide films
Deheng Zhang,H. L. Ma +1 more
TL;DR: In this paper, the main scattering mechanisms for the TCO films are ionized impurity scattering in low-temperature range and lattice vibration scattering in high temperature range, and the results obtained from Hall measurements on our ZnO, ITO, SnO2 and SnO 2:F films prepared with various methods supports the analysis.
Journal ArticleDOI
Preparation of transparent conducting ZnO:Al films on polymer substrates by r. f. magnetron sputtering
TL;DR: In this article, high-resistance polycrystalline conducting ZnO films having a preferred orientation with the (002) planes parallel to the substrates were deposited on polyisocyanate (PI) substrate with resistivities in the range of 4.1×10−3 to 5.110−4 Ω cm, with carrier densities more than 2.6×1020 cm−3 and Hall mobilities between 5.78 and 13.11 cm2 V−1 s−1.
Journal ArticleDOI
Influence of annealing on the properties of ZnO:Ga films prepared by radio frequency magnetron sputtering
TL;DR: In this paper, the effects of post-annealing treatment on structural, electrical and optical properties of transparent conducting gallium-doped Zinc Oxide (ZnO:Ga) thin films were investigated.
Journal ArticleDOI
Electrical and optical properties of WO3 thin films
TL;DR: In this article, the optical and electrical properties of intensively colored WO3 thin films were studied and it was found that the near-infrared reflectivity increases in the colored state.
Journal ArticleDOI
Properties of R.F. magnetron sputtered cadmium-tin-oxide and indium-tin-oxide thin films
TL;DR: In this paper, sputter-deposited thin films of indium-tin-oxide (ITO) and cadmium-titoxide (CTO) with distinct diffraction peaks corresponding to the (220), (222), and (400) crystal planes were obtained at elevated deposition temperatures.
References
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Journal ArticleDOI
Optical properties of r.f. reactive sputtered tin-doped In2O3 films
TL;DR: In this article, the optical effective mass of tin-doped In 2 O 3 films prepared by r.f. reactive sputtering has been determined from measurements of the plasma resonance frequency in the near-infrared region and the refractive index in the visible region.
Journal ArticleDOI
Optical and electrical properties of doped In2O3 films
H. Köstlin,R. Jost,W. Lems +2 more
TL;DR: In this paper, the free electron concentration is observed to increase with the Sn content up to a maximum and the optical constants of the films are compared with theoretical values obtained from electrical data.
Journal ArticleDOI
A microstructural study of low resistivity tin-doped indium oxide prepared by d.c. magnetron sputtering
Yuzo Shigesato,David C. Paine +1 more
TL;DR: The microstructure of low resistivity (∼ 2 × 10−4 Ω cm) Sn-doped In2O3 (ITO) thin films prepared by multipass d.c. magnetron sputter deposition with an ITO (10 wt.% SnO2) target onto soda-lime glass substrates was investigated using plan-view and cross-sectional transmission electron microscopy (TEM) and X-ray diffraction as discussed by the authors.
Journal ArticleDOI
Electrical and optical properties of indium tin oxide thin films deposited on unheated substrates by d.c. reactive sputtering
T. Karasawa,Y. Miyata +1 more
TL;DR: In this paper, a transparent conducting thin films of indium tin oxide (ITO) have been deposited by d.c. reactive planar magnetron sputtering by using metal InSn alloy target in an ArO2 gas mixture, which achieved sheet resistance of as low as about 50-60 Ω/□ (or a resistivity of abouts 7 × 10−4 Ω cm).
Journal ArticleDOI
Chemical vapor deposition of transparent electrically conducting layers of indium oxide doped with tin
J. Kane,H. P. Schweizer,W. Kern +2 more
TL;DR: In this paper, the use of the indium chelate derived from dipivaloyl methane, in combination with dibutyl tin diacetate, has been investigated as a CVD technique for the preparation of transparent highly conducting layers of tin-doped indium oxide.
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