Proceedings ArticleDOI
Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency
Luis Felipe Vicentis Caparroz,Joao Antonio Martino,Eddy Simoen,Cor Claeys,Paula Ghedini Der Agopian +4 more
- pp 1-4
TLDR
In this article, the authors study the effect of proton radiation on SOI analog parameters based on the device inversion coefficient (IC) and define an optimal analog condition by basing the analysis on the inversion coefficients, even considering the radiation impact.Abstract:
This paper studies the proton radiation influence on SOI FinFET analog parameters based on the device inversion coefficient (IC). The analysis focuses on some figures of merit in analog design like the transistor efficiency, the unity gain frequency and the intrinsic voltage gain. Although the proton radiation affects the device performance, it is possible to define an optimal analog condition by basing the analysis on the inversion coefficient, even considering the radiation impact. N-channel devices are affected in a different manner when compared to p-channel counterparts, which can be decisive depending on the application.read more
Citations
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Journal ArticleDOI
Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation
Bruna Ramos de Sousa,Alexandro de M. Nogueira,Paula Ghedini Der Agopian,Joao Antonio Martino +3 more
TL;DR: In this paper, the influence of proton-irradiation in the voltage gain of two-stage operational transconductance amplifier (OTA) designed with silicon-on-insulator (SOI) fin field effect transistors (FinFETs) is studied.
Journal ArticleDOI
Analysis of Omega-Gate Nanowire SOI MOSFET Under Analog Point of View
TL;DR: In this article, an evaluation of the performance of the omega-gate nanowire n-and p-type SOI MOSFETs focusing on the main analog figures of merit is presented.
References
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Book
FinFETs and Other Multi-Gate Transistors
TL;DR: FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FET) and explains the physics and properties.
Book
Analog design essentials
TL;DR: In this article, the authors compare MOST and Bipolar transistor models, including Amplifiers, Source followers, and Cascodes, with differentially voltage and current amplifiers.
Journal ArticleDOI
Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors
Eddy Simoen,Marc Gaillardin,P. Paillet,Robert A. Reed,Ronald D. Schrimpf,Michael L. Alles,F. El-Mamouni,Daniel M. Fleetwood,Alessio Griffoni,Cor Claeys +9 more
TL;DR: In this article, the authors describe the current understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and FinFET CMOS technologies.
Proceedings ArticleDOI
Design-oriented characterization of CMOS over the continuum of inversion level and channel length
TL;DR: A methodology for small signal characterization of CMOS processes over the full range of inversion level and channel length is presented and initial results are given illustrating EKV MOS model transconductance accuracy.
Journal ArticleDOI
Proton-Induced Mobility Degradation in FinFETs With Stressor Layers and Strained SOI Substrates
Daisuke Kobayashi,Eddy Simoen,Sofie Put,Alessio Griffoni,M Poizat,Kazuyuki Hirose,Corneel Claeys +6 more
TL;DR: In this article, the authors examined the effect of proton irradiation on fin-type field effect transistors (FinFETs) from the viewpoint of their electrical-performance parameter of mobility.