Pulse Power Failure Modes in Semiconductors

TLDR: In this paper, the permanent damage levels associated with a number of different devices and failure mechanisms associated with each were determined both for positive and negative polarity pulses at different conditions of quiescent bias and pulse width.

Abstract: Semiconductor devices operating under both biased and unbiased conditions are vulnerable to permanent damage from relatively moderate levels of pulsed electrical energy, particularly of submicrosecond pulse duration. An experimental study was performed to determine the permanent damage levels associated with a number of different devices and to identify the failure mechanisms associated with each. The device types investigated included general purpose and high speed computer diodes, a medium power diode, medium frequency and UHF transistor amplifiers, and a dielectrically isolated diode gate expander. The permanent damage levels associated with these devices were determined both for positive and negative polarity pulses at different conditions of quiescent bias and pulse width. The pulse duration times included the range of 30 to 300 nanoseconds, and in some instances, up to 1 microsecond. Failure models for both thermal second breakdown induced damage to the semiconductor junction and thermal damage to the device interconnecting leads and metallization patterns were also developed.