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Quantum interference channeling at graphene edges

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TLDR
Topographies of different edge structures of monolayer graphene show that the localization of the electronic density of states along the C-C bonds results in quantum interference patterns along the graphene carbon bond network, whose shapes depend only on the edge structure and not on the electron energy.
Abstract
Electron scattering at graphene edges is expected to make a crucial contribution to the electron transport in graphene nanodevices by producing quantum interferences. Atomic-scale scanning tunneling microscopy (STM) topographies of different edge structures of monolayer graphene show that the localization of the electronic density of states along the C-C bonds, a property unique to monolayer graphene, results in quantum interference patterns along the graphene carbon bond network, whose shapes depend only on the edge structure and not on the electron energy.

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Citations
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The surface science of graphene: Metal interfaces, CVD synthesis, nanoribbons, chemical modifications, and defects

TL;DR: Graphene, a single atomic layer of sp2 hybridized carbon, exhibits a zero-band gap with linear band dispersion at the Fermi-level, forming a Dirac-cone at the K -points of its Brillouin zone as mentioned in this paper.
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The relation between structure and quantum interference in single molecule junctions.

TL;DR: It is demonstrated that QI in aromatic molecules is intimately related to the topology of the molecule's π system and a simple graphical scheme is established to predict the existence of QI-induced transmission antiresonances.
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Spatially Resolved Electronic Structures of Atomically Precise Armchair Graphene Nanoribbons

TL;DR: The surface-assisted bottom-up fabrication of atomically precise armchair graphene nanoribbons with predefined widths, namely 7, 14- and 21-AGNRs, on Ag(111) as well as their spatially resolved width-dependent electronic structures are presented.
Journal ArticleDOI

Silicene, a promising new 2D material

TL;DR: Theoretical studies were the first to predict a puckered honeycomb structure with electronic properties resembling those of graphene as mentioned in this paper, which has led to the recent growth of silicene on other substrates with different chemical characteristics.
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Defect-like Structures of Graphene on Copper Foils for Strain Relief Investigated by High-Resolution Scanning Tunneling Microscopy

TL;DR: This work indicates that graphene can be grown with a perfect continuity extending over both crystalline and noncrystalline regions, highly suggestive of weak graphene-substrate interactions.
References
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Journal ArticleDOI

Energy band-gap engineering of graphene nanoribbons.

TL;DR: It is found that the energy gap scales inversely with the ribbon width, thus demonstrating the ability to engineer the band gap of graphene nanostructures by lithographic processes.
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Electronic Confinement and Coherence in Patterned Epitaxial Graphene

TL;DR: In this paper, a single epitaxial graphene layer at the silicon carbide interface is shown to reveal the Dirac nature of the charge carriers, and all-graphene electronically coherent devices and device architectures are envisaged.
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Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

TL;DR: A chemical route to produce graphene nanoribbons with width below 10 nanometers was developed, as well as single ribbons with varying widths along their lengths or containing lattice-defined graphene junctions for potential molecular electronics.
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Energy Gaps in Graphene Nanoribbons

TL;DR: The authors' ab initio calculations show that the origin of energy gaps for GNRs with armchair shaped edges arises from both quantum confinement and the crucial effect of the edges, which differs from the results of simple tight-binding calculations or solutions of the Dirac's equation based on them.
Journal ArticleDOI

Half-metallic graphene nanoribbons

TL;DR: In this article, it was shown that if in-plane homogeneous electric fields are applied across the zigzag-shaped edges of the graphene nanoribbons, their magnetic properties can be controlled by the external electric fields.
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