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Quantum well lasers
TLDR
In this article, the origin of Quantum Wells and the Quantum Well Laser is discussed and the effect of intrinsic relaxation on optical spectra is discussed, as well as the properties of Quantum Well Lasers.Abstract:
Foreword: The Origin of Quantum Wells and the Quantum Well Laser. Optical Gain in III-V Bulk and Quantum Well Semiconductors. Intraband Relaxation Effect on Optical Spectra. Multiquantum Well Lasers: Threshold Considerations. Ultra-Low Threshold Quantum Well Lasers. Dynamics of Quantum Well Lasers. Single Quantum Well Ingaasp and Algaas Lasers: A Study of Some Peculiarities. Valence Band Engineering in Quantum Well Lasers. Strained Layer Quantum Well Heterostructure Lasers. Algainp Quantum Well Lasers. Quantum Wire Semiconductor Lasers. Chapter References. Index.read more
Citations
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
Chunming Huang,Sanfeng Wu,Ana M. Sanchez,Jonathan J. P. Peters,Richard Beanland,Jason Ross,Pasqual Rivera,Wang Yao,David Cobden,Xiaodong Xu +9 more
TL;DR: It is demonstrated that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2, and their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface.
Journal ArticleDOI
Passively modelocked surface-emitting semiconductor lasers
Ursula Keller,Anne C. Tropper +1 more
TL;DR: In this paper, the physical principles of ultrashort pulse generation in VECSELs are discussed, considering the role played by the semiconductor quantum well gain structure, and the saturable absorber.
Journal ArticleDOI
Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams
TL;DR: In this paper, the authors describe the design, fabrication, and measured characteristics of the high-power optically pumped-semiconductor (OPS) vertical-external-cavity surface-emitting lasers (VCSELs).
Journal ArticleDOI
Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching
TL;DR: In this article, a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II, and III heterostructures was presented.