Journal ArticleDOI
Raman and point contact current-voltage characterization of laser-induced diffusion in GaAs
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TLDR
Raman scattering and point contact current-voltage (PCIV) measurements were used as characterization tools of tin-diffused GaAs layers in this paper, where the diffusion was induced by irradiating GaAs substrates covered with thin tin layers single pulses of a ruby laser.Abstract:
Raman scattering and point contact current-voltage (PCIV) measurements were used as characterization tools of tin-diffused GaAs layers. Diffusion was induced by irradiating GaAs substrates covered with thin tin layers single pulses of a ruby laser. Samples processed with the lowest energies show strong damage and incomplete electrical activation as deduced from Raman and PCIV measurements, respectively. Raman microprobe in depth analysis and PCIV profiles also suggest the presence of a damaged region with incomplete electrical activation at the boundary between the molten layer and the solid substrate.read more
Citations
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Atomic layer epitaxy of GaAs from tertiarybutylarsine and triethylgallium
TL;DR: In this article, a stable 4×8 surface reconstruction has been observed after atomic layer epitaxy (ALE) from tertiarybutylarsine (TBA) and triethylgallium (TEG) in a chemical beam epitaxy system is reported.
Journal ArticleDOI
A MODEL FOR OPTICAL ABSORPTION OF AMORPHOUS GaAs IN THE FAR-INFRARED RANGE BY USING AN OPERATIONAL TECHNIQUE
TL;DR: In this article, an expression for the optical absorption coefficient and phonon density of states in the low region of the far-infrared range was obtained by considering a sample of amorphous GaAs with a small zone of dynamical disorder.
Journal ArticleDOI
Micro-Raman study of UV laser ablation of GaAs and Si substrates
TL;DR: In this paper, surface topography (optical interferometry) and micro-Raman spectroscopy were used to study the effects of laser ablation on GaAs and Si substrates.
Journal ArticleDOI
Microraman Study of Laser Ablated Gaas
TL;DR: In this article, surface inspection and MicroRaman spectroscopy were used to study morphologic and structural changes induced by UV pulsed laser beams on GaAs by means of surface inspection (optical interferometry) and micro-Raman Spectroscopy.
Journal ArticleDOI
Raman characterization of GaAs doped with Sn by laser assisted diffusion
TL;DR: In this article, a GaAs was heavily doped with Sn by a laser assisted diffusion procedure and the energy density of the laser was varied between 0.3 and 0.7 J cm −2.
References
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Journal ArticleDOI
Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAs
A. Mooradian,G. B. Wright +1 more
Journal ArticleDOI
Raman scattering by coupled LO-phonon-plasmon modes and forbidden TO-phonon Raman scattering in heavily doped p-type GaAs
Diego Olego,Manuel Cardona +1 more
TL;DR: In this article, the wave-vector nonconservation and the breakdown of the selection rules are due to scattering by the ionized impurities, and the measured peak positions, linewidth, and intensities of the LO-like and TO-like Raman lines are explained by postulating a wavevector distribution of the modes created in the Raman process.
Journal ArticleDOI
Raman scattering by wavevector dependent coupled plasmon - LO phonons of n - GaAs
TL;DR: In this article, the wavevector and frequency-dependent dielectric function of the charge carriers of n-GaAs has been studied using coupled plasmon-LO phonons.
Journal ArticleDOI
Efficient GaAs solar cells formed by UV laser chemical doping
TL;DR: ArF and XeF excimer laser radiation has been used to form p−n junctions in GaAs as mentioned in this paper, which can also produce doped GaAs layers with sheet resistances as low as 30 Ω/⧠.
Journal ArticleDOI
On the scaling of an ion-implanted silicon MESFET
S.N. Chatttopadhyay,B.B. Pal +1 more
TL;DR: In this paper, an ion-implanted silicon MESFET is scaled to smaller sizes assuming constant field within the device and the effect of side walls in the space charge region below the gate in the below pinch-off region.