Journal ArticleDOI
Random pn-junctions for physical cryptography
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TLDR
In this article, high-rectification pn-diodes (rectification ratios up to 2×107) prepared by aluminum-induced crystallization on crystalline Si-wafers, which exhibit highly random I(V) characteristics, are employed as physical uncloneable functions for cryptography.Abstract:
In this paper, we report on high-rectification pn-diodes (rectification ratios up to 2×107) prepared by aluminum-induced crystallization on crystalline Si-wafers, which exhibit highly random I(V) characteristics. We argue that arrays of such diodes can be employed as physical uncloneable functions for cryptography. To resolve the structure of the active diode area, focused-ion beam imaging was used. The I(V) curves of the diodes reveal that both a smaller polycrystalline silicon film thickness and a smaller diode size lead to increasing randomness due to the increasing inhomogeneity of thinner films and due to more pronounced grain boundary effects for smaller diodes.read more
Citations
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Proceedings ArticleDOI
Modeling attacks on physical unclonable functions
TL;DR: In this article, numerical modeling attacks are used to break the security of physical unclonable functions (PUFs) by constructing a computer algorithm which behaves indistinguishably from the original PUF on almost all CRPs.
Journal ArticleDOI
PUF Modeling Attacks on Simulated and Silicon Data
Ulrich Rührmair,Jan Sölter,Frank Sehnke,Xiaolin Xu,Ahmed Mahmoud,Vera Stoyanova,Gideon Dror,Jürgen Schmidhuber,Wayne Burleson,Srinivas Devadas +9 more
TL;DR: Numerical modeling attacks on several proposed strong physical unclonable functions (PUFs) are discussed, leading to new design requirements for secure electrical Strong PUFs, and will be useful to PUF designers and attackers alike.
Posted Content
PUF Modeling Attacks on Simulated and Silicon Data.
Ulrich Rührmair,Jan Sölter,Frank Sehnke,Xiaolin Xu,Ahmed Mahmoud,Vera Stoyanova,Gideon Dror,Jürgen Schmidhuber,Wayne Burleson,Srinivas Devadas +9 more
TL;DR: In this article, numerical modeling attacks on several PUFs are discussed. But the authors focus on strong PUFs, and do not consider weak PUFs such as XOR Arbiter PUFs and Lightweight Secure PUFs.
Book ChapterDOI
Security Based on Physical Unclonability and Disorder
TL;DR: This chapter provides a classification for past and ongoing work in physical disorder based security alongside with security analyses and implementation examples and outlines some open problems and future research opportunities.
Proceedings ArticleDOI
FPGA PUF using programmable delay lines
TL;DR: A high resolution programmable delay logic (PDL) implemented by lookup table (LUT) internal structure is introduced, and fine tuning is performed to cancel out delay skews caused by asymmetries in routing and systematic variations.
References
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Journal ArticleDOI
Physical one-way functions
TL;DR: The concept of fabrication complexity is introduced as a way of quantifying the difficulty of materially cloning physical systems with arbitrary internal states as primitives for physical analogs of cryptosystems.
Journal ArticleDOI
A polymer/semiconductor write-once read-many-times memory
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Journal ArticleDOI
Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization
Oliver Nast,Stuart Wenham +1 more
TL;DR: Aluminum-induced crystallization of amorphous silicon is studied as a promising low-temperature alternative to solid-phase and laser crystallization in this article, where the overall process of the Al and Si layer exchange during annealing at temperatures below the eutectic temperature of 577 °C is investigated by various microscopy techniques.
Journal ArticleDOI
Molecular electronics: from devices and interconnect to circuits and architecture
TL;DR: This work explores the design space available to the nanoelectronic circuit designer and system architect based on proposed nanoscale interconnect and device structures and presents issues related to circuits and architecture.
Journal ArticleDOI
Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon
Oliver Nast,Andreas J. Hartmann +1 more
TL;DR: In this article, the authors studied the influence of the polycrystalline structure of the evaporated Al, the Si-Al layer sequence, and the interface layer between the Al and Si films on the overall crystallization process.