Journal ArticleDOI
Recombination Emission in InSb
Aram Mooradian,H. Y. Fan +1 more
TLDR
In this article, the emission of phonon-assisted transitions is about 150 times weaker than that of direct transitions; this ratio is consistent with the strength of polar-mode coupling.Abstract:
Optically excited recombination emission has been studied for $n$- and $p$-type single-crystal samples of InSb at 77 and 4.2\ifmmode^\circ\else\textdegree\fi{}K. Emissions associated with band-to-band transitions, transitions with creation of an optical phonon, and transitions involving acceptor impurities have been observed. The band-to-band emission in the pure samples can be attributed to direct transitions, whereas the emission in samples of high donor concentrations clearly shows transitions violating wave-vector conservation. The emission of phonon-assisted transitions is about 150 times weaker than that of direct transitions; this ratio is consistent with the strength of polar-mode coupling. The $n$-type as well as the $p$-type samples show an emission band due to electron transitions from the conduction band to some impurity level at 7.5 meV above the valence band, and the emission is much more prominent in the Zn-doped samples. Germanium-doped $p$-type samples show a weak emission band associated with an acceptor level at 17 meV above the valence band. Samples of large donor concentrations show the effect of band tailing. The main impurity emission increases linearly while the band-to-band emission increased quadratically with the intensity of exciting light. From the shift and splitting of the emission under applied magnetic field, an electron effective mass of ${m}_{e}\ensuremath{\sim}0.018m$ and an electron $g$ factor of $|g|=40 \mathrm{at} 30$ kG are obtained. Electroluminescence has been observed in $p$-type crystals under pulsed electric fields of \ensuremath{\sim}60 V/cm. The observed spectrum appears to be a broadened impurity line. The emission is more than an order of magnitude weaker than optically excited emission corresponding to the same sample conductance.read more
Citations
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Journal ArticleDOI
Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy.
TL;DR: In this paper, the infrared photoluminescence (PL) from InSb, InAs, and InAs1−xSbx (x < 0.3) epitaxial layers grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated for the first time over an extended temperature range.
Journal ArticleDOI
Light-emitting diodes
A. A. Bergh,P. J. Dean +1 more
TL;DR: In this paper, a survey of prominent applications for various LEDs is presented, with an emphasis on the III-V semiconducting compounds and GaP LEDs in particular, including photometry, the physics of electrical injection and luminescence.
Journal ArticleDOI
Hot electrons and phonons under high intensity photoexcitation of semiconductors
TL;DR: In this article, it has been shown that at relatively low intensities (5 W/cm 2 for GaAs) the photoexcited carrier distribution is Maxwellian with a carrier temperature T e different from the lattice temperature.
Journal ArticleDOI
Edge luminescence of direct-gap semiconductors
A P Levanyuk,V V Osipov +1 more
TL;DR: In this paper, an analysis is made of the theory of the luminescence spectra of semiconductors with direct optical transitions involving recombination of nonequilbrium carriers whose energies are close to the band gap edges.
References
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Journal ArticleDOI
Oscillatory Magnetoabsorption in InSb Under High Resolution
TL;DR: In this article, polarized magnetoabsorption spectra of exciton formation transitions in InSb have been measured under high resolution at liquid helium temperature, and the initial interpretation of the detailed spectra obtained involved fitting theoretical spectra calculated from the theories of Kane, Luttinger, and Elliott‐Loudon in order to account for band nonparabolicities, valence band degeneracy effects, and exciton binding energies, respectively.
Journal ArticleDOI
Multiphonon Processes in the Photoconductivity of InSb
Journal ArticleDOI
Effect laser dans l'antimoniure d'indium
TL;DR: The authors observe a 4° and 2°K lumiere emise en impulsions par une jonction alliee d'antimoniure d'indium; a 2°k, pour une densite de courant de 21500 A/cm 2 ; les modes longitudinaux apparaissent.
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