Journal ArticleDOI
Recombination Emission in InSb
Aram Mooradian,H. Y. Fan +1 more
TLDR
In this article, the emission of phonon-assisted transitions is about 150 times weaker than that of direct transitions; this ratio is consistent with the strength of polar-mode coupling.Abstract:
Optically excited recombination emission has been studied for $n$- and $p$-type single-crystal samples of InSb at 77 and 4.2\ifmmode^\circ\else\textdegree\fi{}K. Emissions associated with band-to-band transitions, transitions with creation of an optical phonon, and transitions involving acceptor impurities have been observed. The band-to-band emission in the pure samples can be attributed to direct transitions, whereas the emission in samples of high donor concentrations clearly shows transitions violating wave-vector conservation. The emission of phonon-assisted transitions is about 150 times weaker than that of direct transitions; this ratio is consistent with the strength of polar-mode coupling. The $n$-type as well as the $p$-type samples show an emission band due to electron transitions from the conduction band to some impurity level at 7.5 meV above the valence band, and the emission is much more prominent in the Zn-doped samples. Germanium-doped $p$-type samples show a weak emission band associated with an acceptor level at 17 meV above the valence band. Samples of large donor concentrations show the effect of band tailing. The main impurity emission increases linearly while the band-to-band emission increased quadratically with the intensity of exciting light. From the shift and splitting of the emission under applied magnetic field, an electron effective mass of ${m}_{e}\ensuremath{\sim}0.018m$ and an electron $g$ factor of $|g|=40 \mathrm{at} 30$ kG are obtained. Electroluminescence has been observed in $p$-type crystals under pulsed electric fields of \ensuremath{\sim}60 V/cm. The observed spectrum appears to be a broadened impurity line. The emission is more than an order of magnitude weaker than optically excited emission corresponding to the same sample conductance.read more
Citations
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Journal ArticleDOI
Recent Progress on Exciton Polaritons in Layered Transition‐Metal Dichalcogenides
Fengrui Hu,Fengrui Hu,Zhe Fei +2 more
Journal ArticleDOI
Heavily doped GaAs:Se. I. Photoluminescence determination of the electron effective mass
TL;DR: In this paper, the photoluminescence (PL) spectra of Se-doped n-type GaAs grown by metalorganic chemical vapor deposition are analyzed using a physical model which explains in a consistent manner both the energy of the peak and the full width at half-maximum, and accounts for the electron density.
Journal ArticleDOI
Fundamentals of light emission from silicon devices
TL;DR: In this article, the fundamental emission mechanisms of light-emitting phenomena from silicon semiconducting material are presented from an experimental rather than a theoretical point of view. And the applicability of these mechanisms with respect to reliability physics, design verification, and failure analysis of semiconductor devices is outlined and the state of the art of emission microscopy is reviewed.
Journal ArticleDOI
Luminescence from InAsGaSb superlattices
TL;DR: Luminescence experiments performed in InAsGaSb superlattices as a function of temperature were performed in this paper, showing that the luminescence spectra exhibit a low-energy tail below 300 K, which leads to simple theoretical models to account for impurities and interface defects.
Journal ArticleDOI
Photoluminescence of infrared‐sensing materials using an FTIR spectrometer
TL;DR: In this paper, two techniques designed to facilitate the extraction of spontaneous radiative spectrum are discussed and compared, and two techniques for the identification of the photoluminescence peak are compared.
References
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Journal ArticleDOI
Determination of Optical Constants and Carrier Effective Mass of Semiconductors
W. G. Spitzer,H. Y. Fan +1 more
TL;DR: In this article, the effect of free carriers on the optical constants has been determined by using reflectivity and absorption measurements in the region 5 to 35 micron, and the significance of ${m}_{s}$ is considered for four different types of energy band structure.
Journal ArticleDOI
Optical absorption and recombination radiation in semiconductors due to transitions between hydrogen-like acceptor impurity levels and the conduction band
TL;DR: In this paper, a simplified theory of the optical absorption and recombination radiation spectra due to direct transitions between hydrogen-like acceptor levels and the conduction band in a semiconductor with simple bands is given.
Journal ArticleDOI
A theory of edge-emission phenomena in CdS, ZnS and ZnO
TL;DR: In this article, a tight-binding model was proposed to assign symmetry assignments of p valence bands and s conduction bands for ZnO and CdS on the basis of a tight binding model.
Journal ArticleDOI
INFRARED InSb LASER DIODE IN HIGH MAGNETIC FIELDS
Journal ArticleDOI
Optical Properties of n-Type InP
TL;DR: In this article, the intrinsic absorption edge of $n$-type InP at 77\ifmmode^\circ\else\textdegree\fi{}K and 300\ifmode^''circ\decrease\text degree\fi {}K are reported.
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