Journal ArticleDOI
Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
R. B. Iverson,R. Reif +1 more
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In this paper, a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self-implantation was carried out and the crystallization behavior was found to be similar to the crystallisation behavior of films deposited in the amorphous state, however, a transient time was observed, during which negligible crystallization occurs.Abstract:
This paper presents a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self‐implantation. The crystallization behavior was found to be similar to the crystallization behavior of films deposited in the amorphous state, as reported in the literature; however, a transient time was observed, during which negligible crystallization occurs. The films were prepared by low‐pressure chemical vapor deposition onto thermally oxidized silicon wafers and amorphized by implantation of silicon ions. The transient time, nucleation rate, and characteristic crystallization time were determined from the crystalline fraction and density of grains in partially recrystallized samples for anneal temperatures from 580 to 640 °C. The growth velocity was calculated from the nucleation rate and crystallization time and is lower than values in the literature for films deposited in the amorphous state. The final grain size, as calculated from the crystallization param...read more
Citations
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Journal ArticleDOI
Polycrystalline silicon thin film transistors
TL;DR: In this paper, a-Si precursors are used for the preparation of the material by direct deposition and by crystallization from pre-deposition precursor, and the characterization of the defect-induced trapping states within the material and their passivation is presented.
Journal ArticleDOI
Ion-beam-induced amorphization and recrystallization in silicon
TL;DR: In this paper, the most significant experimental observations related to ion-beam-induced amorphization in Si and the models that have been developed to describe the process are described and analyzed.
Patent
Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates
Stephen J. Fonash,Gang Liu +1 more
TL;DR: In this paper, a patterning of the deposition of the nucleating site forming material on the glass substrate was proposed to selectively crystallize only in areas in contact with the forming material.
Journal ArticleDOI
Crystalline Si Films for Integrated Active-Matrix Liquid-Crystal Displays
James S. Im,Robert S. Sposili +1 more
TL;DR: In this article, the authors proposed a system-on-glass (SOC) display architecture, in which the entire electronic circuitry needed for a product is incorporated directly onto a glass substrate.
Journal ArticleDOI
Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications
Noriyoshi Yamauchi,Rafael Reif +1 more
TL;DR: In this article, a review of the self-implantation method for polycrystalline silicon thin transistors is presented, and the mechanism of selective amorphization by the silicon self implantation and the crystallization by thermal annealing is discussed.
References
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Journal ArticleDOI
Silicon graphoepitaxy using a strip-heater oven
TL;DR: In this article, a SiO2 cap, either intentionally deposited or produced by laser crystallization in the presence of oxygen, was found to be necessary for Si graphoepitaxy.
Journal ArticleDOI
Time Lag in the Self‐Nucleation
TL;DR: In this paper, an approximate and general treatment of the time lag in self-nucleation is given, where the relation to be satisfied approximately by the rate of nucleation in non-steady state is obtained and solved without first seeking the distribution of embryos.
Journal ArticleDOI
Effects of thermal annealing on the refractive index of amorphous silicon produced by ion implantation
TL;DR: In this paper, infrared reflection measurements of the refractive index of silicon have been used to identify two well-defined optical states of amorphous silicon produced by ion implantation.
Journal ArticleDOI
Ion-beam induced epitaxy of silicon
TL;DR: In this article, the authors showed that the regrowth proceeds from the amorphous-crystalline interface, and has an initially linear dose dependence, however, the annealing beam introduces additional damage centered at or beyond the ion range.