Journal ArticleDOI
Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
R. B. Iverson,R. Reif +1 more
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TLDR
In this paper, a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self-implantation was carried out and the crystallization behavior was found to be similar to the crystallisation behavior of films deposited in the amorphous state, however, a transient time was observed, during which negligible crystallization occurs.Abstract:
This paper presents a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self‐implantation. The crystallization behavior was found to be similar to the crystallization behavior of films deposited in the amorphous state, as reported in the literature; however, a transient time was observed, during which negligible crystallization occurs. The films were prepared by low‐pressure chemical vapor deposition onto thermally oxidized silicon wafers and amorphized by implantation of silicon ions. The transient time, nucleation rate, and characteristic crystallization time were determined from the crystalline fraction and density of grains in partially recrystallized samples for anneal temperatures from 580 to 640 °C. The growth velocity was calculated from the nucleation rate and crystallization time and is lower than values in the literature for films deposited in the amorphous state. The final grain size, as calculated from the crystallization param...read more
Citations
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Journal ArticleDOI
Grain growth kinetics during ion beam irradiation of chemical vapor deposited amorphous silicon
TL;DR: In this paper, the amorphous to polycrystal transition during Kr ion beam irradiation of chemical vapor deposited silicon layers has been studied in the temperature range 320-480°C.
Journal ArticleDOI
Structural changes in a-Si:H films deposited on the edge of crystallinity
TL;DR: Using infrared, H evolution and x-ray diffraction (XRD), the structure of high H dilution, glow discharge deposited a-Si:H films ''on the edge of crystallinity'' is examined in this article.
Journal ArticleDOI
Large-grained polycrystalline Si films obtained by selective nucleation and solid phase epitaxy
TL;DR: In this paper, the authors investigated the formation of large-grain polycrystalline silicon films on glass substrates for application in low-cost thin film crystalline silicon solar cells.
Journal ArticleDOI
Solid-phase epitaxy of a cavity-shaped amorphous alumina nanomembrane structure on a sapphire substrate
Jeonghwan Jang,Duyoung Yang,Daeyoung Moon,Daehan Choi,Hye Jin Lim,Sung-gyu Kang,Dukkyu Bae,Heung Nam Han,Yongjo Park,Euijoon Yoon +9 more
TL;DR: In this article, a stripe-shaped cavity structure was formed with amorphous alumina membrane on a sapphire substrate and its solid phase epitaxy (SPE) was investigated by transmission electron microscopy (TEM).
Journal ArticleDOI
Anomalous Sb redistribution during the preparation of delta-doping layers in silicon
W. F. J. Slijkerman,P. M. Zagwijn,J. F. van der Veen,G. F. A. van de Walle,Dirk J. Gravesteijn +4 more
TL;DR: In this article, a broadening of the delta-doping profile was observed as a result of segregation during amorphous Si crystallization, which was attributed to enhanced diffusion at the c−Si/a−Si interface.
References
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Journal ArticleDOI
Kinetics of Phase Change. I General Theory
TL;DR: In this paper, the theory of phase change is developed with the experimentally supported assumptions that the new phase is nucleated by germ nuclei which already exist in the old phase, and whose number can be altered by previous treatment.
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Kinetics of Phase Change. II Transformation‐Time Relations for Random Distribution of Nuclei
TL;DR: In this article, a relation between the actual transformed volume V and a related extended volume V1 ex is derived upon statistical considerations, and a rough approximation to this relation is shown to lead, under the proper conditions, to the empirical formula of Austin and Rickett.
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Granulation, Phase Change, and Microstructure Kinetics of Phase Change. III
TL;DR: In this paper, a comprehensive description of the phenomena of phase change may be summarized in Phase Change, Grain Number and Microstructure Formulas or Diagrams, giving, respectively, the transformed volume, grain, and microstructure densities as a function of time, temperature, and other variables.
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Homogeneous nucleation and growth of droplets in vapours
TL;DR: The theory of homogeneous nucleation of liquid drops in supersaturated vapours is reviewed in this paper, and a new kinetic treatment which accounts for the heating of the growing clusters due to the latent heat of condensation is presented, and the irreversible thermodynamics of non-isothermal nucleation discussed.
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Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
TL;DR: Amorphous layers, approximately 4000 A thick, were formed on single-crystal Si samples by implantation of 28Si ions at LN2 substrate temperature as mentioned in this paper, where channeling effect measurements with MeV 4He ions were used to measure the thickness of the amorphous layers and to measure subsequent epitaxial regrowth on the underlying crystalline substrates.