Journal ArticleDOI
Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
R. B. Iverson,R. Reif +1 more
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In this paper, a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self-implantation was carried out and the crystallization behavior was found to be similar to the crystallisation behavior of films deposited in the amorphous state, however, a transient time was observed, during which negligible crystallization occurs.Abstract:
This paper presents a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self‐implantation. The crystallization behavior was found to be similar to the crystallization behavior of films deposited in the amorphous state, as reported in the literature; however, a transient time was observed, during which negligible crystallization occurs. The films were prepared by low‐pressure chemical vapor deposition onto thermally oxidized silicon wafers and amorphized by implantation of silicon ions. The transient time, nucleation rate, and characteristic crystallization time were determined from the crystalline fraction and density of grains in partially recrystallized samples for anneal temperatures from 580 to 640 °C. The growth velocity was calculated from the nucleation rate and crystallization time and is lower than values in the literature for films deposited in the amorphous state. The final grain size, as calculated from the crystallization param...read more
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Proceedings ArticleDOI
Polycrystalline silicon for thin film solar cells
TL;DR: In this paper, the authors report on the characterisation of epitaxial Si on Si substrates grown at temperatures around 450/spl deg/C as one prerequisite for crystalline Si deposition on low temperature resistant foreign substrates and describe two novel approaches aimed to produce large grained seeding films for subsequent polycrystalline si deposition on glass substrates.
Journal ArticleDOI
Low-resistance phosphorus-doped Si films through blue laser diode annealing
Takashi Noguchi,Tatsuya Okada +1 more
TL;DR: In this paper, the effect of activated annealing on Si films using a new semiconductor blue laser was studied for application to the thin-film transistor (TFT) system on a panel.
Book ChapterDOI
Microstructure and Interfaces of Polysilicon in Integrated Circuits
H. Cerva,H. Oppolzer +1 more
TL;DR: In this article, the changes in microstructure and surface roughness of polysilicon films with parameters such as deposition temperature, type of dopant and annealing conditions are reviewed.
Journal ArticleDOI
Grain Size Control by Means of Solid Phase Crystallization of Amorphous Silicon
TL;DR: The grain size of thermally crystallized a-Si films is controlled by the nucleation, r N, and growth, r G, rates according to the standard Avrami's theory as discussed by the authors.
Journal ArticleDOI
Solid-phase crystallization kinetics and grain structure during thermal annealing of a-Si:H grown by chemical vapor deposition
TL;DR: In this article, solid-phase crystallization kinetics are examined during thermal annealing of as-deposited hydrogenated amorphous silicon (a-Si:H) thin films deposited by hot-wire chemical vapor deposition (HWCVD) and plasma-enhanced chemical vapor (PECVD).
References
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Journal ArticleDOI
Kinetics of Phase Change. I General Theory
TL;DR: In this paper, the theory of phase change is developed with the experimentally supported assumptions that the new phase is nucleated by germ nuclei which already exist in the old phase, and whose number can be altered by previous treatment.
Journal ArticleDOI
Kinetics of Phase Change. II Transformation‐Time Relations for Random Distribution of Nuclei
TL;DR: In this article, a relation between the actual transformed volume V and a related extended volume V1 ex is derived upon statistical considerations, and a rough approximation to this relation is shown to lead, under the proper conditions, to the empirical formula of Austin and Rickett.
Journal ArticleDOI
Granulation, Phase Change, and Microstructure Kinetics of Phase Change. III
TL;DR: In this paper, a comprehensive description of the phenomena of phase change may be summarized in Phase Change, Grain Number and Microstructure Formulas or Diagrams, giving, respectively, the transformed volume, grain, and microstructure densities as a function of time, temperature, and other variables.
Journal ArticleDOI
Homogeneous nucleation and growth of droplets in vapours
TL;DR: The theory of homogeneous nucleation of liquid drops in supersaturated vapours is reviewed in this paper, and a new kinetic treatment which accounts for the heating of the growing clusters due to the latent heat of condensation is presented, and the irreversible thermodynamics of non-isothermal nucleation discussed.
Journal ArticleDOI
Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
TL;DR: Amorphous layers, approximately 4000 A thick, were formed on single-crystal Si samples by implantation of 28Si ions at LN2 substrate temperature as mentioned in this paper, where channeling effect measurements with MeV 4He ions were used to measure the thickness of the amorphous layers and to measure subsequent epitaxial regrowth on the underlying crystalline substrates.