Journal ArticleDOI
Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
R. B. Iverson,R. Reif +1 more
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TLDR
In this paper, a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self-implantation was carried out and the crystallization behavior was found to be similar to the crystallisation behavior of films deposited in the amorphous state, however, a transient time was observed, during which negligible crystallization occurs.Abstract:
This paper presents a theoretical and experimental study of the recrystallization behavior of polycrystalline silicon films amorphized by self‐implantation. The crystallization behavior was found to be similar to the crystallization behavior of films deposited in the amorphous state, as reported in the literature; however, a transient time was observed, during which negligible crystallization occurs. The films were prepared by low‐pressure chemical vapor deposition onto thermally oxidized silicon wafers and amorphized by implantation of silicon ions. The transient time, nucleation rate, and characteristic crystallization time were determined from the crystalline fraction and density of grains in partially recrystallized samples for anneal temperatures from 580 to 640 °C. The growth velocity was calculated from the nucleation rate and crystallization time and is lower than values in the literature for films deposited in the amorphous state. The final grain size, as calculated from the crystallization param...read more
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Structural studies on Si:H network before and after solid phase crystallization using spectroscopic ellipsometry: Correlation with Raman spectroscopy and transmission electron microscopy
Romyani Goswami,Swati Ray +1 more
TL;DR: In this article, the structure of Si:H before and after solid phase crystallization (SPC) has been investigated by detailed study of spectroscopic ellipsometry (SE).
Journal ArticleDOI
Suppression of nucleation during crystallization of amorphous thin Si films
TL;DR: In this article, the authors demonstrate that a periodic two-step process, involving intermediate temperature ion irradiation followed by high-temperature isothermal annealing, can suppress nucleation in amorphous regions without destroying existing crystals or inhibiting crystal growth.
Journal ArticleDOI
Solid-phase crystallization of ultra high growth rate amorphous silicon films
K. Sharma,M. V. Ponomarev,Marcel A. Verheijen,O. Kunz,Frans D. Tichelaar,M.C.M. van de Sanden,Mariadriana Creatore +6 more
TL;DR: In this article, the authors report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11-60nm/s) by means of the expanding thermal plasma technique, followed by solid phase crystallization (SPC).
Journal ArticleDOI
Study on the Polycrystalline Silicon Films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition
TL;DR: In this paper, a SiH4/H2 mixture was used to obtain a Raman polycrystalline volume fraction of 85.7 %, FWHM of 6.4 cm−1, deposition rate of 9.64 A/s and SEM grain size of ∼3000 A.
Journal ArticleDOI
Formation mechanism of crystallites in the as‐deposited mixed‐phase low pressure chemical vapor deposition silicon thin films
JH Kim,JeongYong Lee,KS Nam +2 more
TL;DR: In this article, the formation mechanism of crystallites observed in as-deposited mixed-phase silicon thin films could be proposed, where the Si/SiO2 interface was observed only at the Si and SiO2 interfaces, and two kinds of crystallite were observed in the film annealed at 570 °C for 3 h.
References
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Journal ArticleDOI
Kinetics of Phase Change. I General Theory
TL;DR: In this paper, the theory of phase change is developed with the experimentally supported assumptions that the new phase is nucleated by germ nuclei which already exist in the old phase, and whose number can be altered by previous treatment.
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Kinetics of Phase Change. II Transformation‐Time Relations for Random Distribution of Nuclei
TL;DR: In this article, a relation between the actual transformed volume V and a related extended volume V1 ex is derived upon statistical considerations, and a rough approximation to this relation is shown to lead, under the proper conditions, to the empirical formula of Austin and Rickett.
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Granulation, Phase Change, and Microstructure Kinetics of Phase Change. III
TL;DR: In this paper, a comprehensive description of the phenomena of phase change may be summarized in Phase Change, Grain Number and Microstructure Formulas or Diagrams, giving, respectively, the transformed volume, grain, and microstructure densities as a function of time, temperature, and other variables.
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Homogeneous nucleation and growth of droplets in vapours
TL;DR: The theory of homogeneous nucleation of liquid drops in supersaturated vapours is reviewed in this paper, and a new kinetic treatment which accounts for the heating of the growing clusters due to the latent heat of condensation is presented, and the irreversible thermodynamics of non-isothermal nucleation discussed.
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Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
TL;DR: Amorphous layers, approximately 4000 A thick, were formed on single-crystal Si samples by implantation of 28Si ions at LN2 substrate temperature as mentioned in this paper, where channeling effect measurements with MeV 4He ions were used to measure the thickness of the amorphous layers and to measure subsequent epitaxial regrowth on the underlying crystalline substrates.