Journal ArticleDOI
Room temperature ferromagnetism in HfO2 films
TLDR
In this article, HfO2 films were produced by sputter deposition in the substrate temperature (Ts) range of room temperature (RT)−300 C and their structural, magnetic, and electrical properties were evaluated.Abstract:
HfO2 films were produced by sputter deposition in the substrate temperature (Ts) range of room temperature (RT)−300 °C and their structural, magnetic, and electrical properties were evaluated. The results indicate that the HfO2 films crystallize in the monoclinic structure and are oriented along the (−111) direction. Magnetization measurements (300–1.8 K) evidence their RT ferromagnetism. The effect of Ts is significant on the magnetic moment (M) and coercivity (Hc). M and Hc values enhanced with increasing Ts due to formation of oxygen vacancies. Increase in the temperature from 150 to 300 K decreases Hc without any transition, indicating that the Curie temperature of HfO2 films is higher than RT. Electrical measurements indicate that the HfO2 films are semiconducting.read more
Citations
More filters
Journal ArticleDOI
Structural dependent room-temperature ferromagnetism in yttrium doped HfO2 nanoparticles
Zorana Dohčević-Mitrović,N. Paunović,Branko Matović,Petre Osiceanu,R. Scurtu,S. Aškrabić,M. Radović +6 more
TL;DR: Y-doped HfO2 nanopowders, produced by metathesis synthesis, exhibit ferromagnetism at room temperature as mentioned in this paper, and X-ray diffraction and Raman measurements have shown that Y doping is followed by increased ferromagnetic ordering because of the increased concentration of oxygen vacancies in different charge states.
Journal ArticleDOI
Triplet ground state of the neutral oxygen-vacancy donor in rutile TiO 2
Journal ArticleDOI
Atomic Layer Deposition and Properties of HfO2-Al2O3 Nanolaminates
Journal ArticleDOI
Transition from paramagnetism to ferromagnetism in HfO2 nanorods
TL;DR: In this article, monoclinic HfO2 nanorods with an average size of about 33.7 ± 3.1nm in length and 8.9µ± 0.7µnm in width were synthesized via a chemical solution method.
Journal ArticleDOI
A new hole-bridge structure based on a SiO2 nanoarray and its ferromagnetism
TL;DR: In this article, a SiO 2 nanoarray with a hole-bridge structure was constructed using a modified Stober method, which was obtained through three-dimensional self-organization from a siO 2 aqueous suspension by vertical deposition.
References
More filters
Journal ArticleDOI
Thin films: unexpected magnetism in a dielectric oxide.
TL;DR: It is shown that thin films of hafnium dioxide (HfO2), an insulating oxide better known as a dielectric layer for nanoscale electronic devices, can be ferromagnetic even without doping.
Journal ArticleDOI
Room-temperature ferromagnetism observed in undoped semiconducting and insulating oxide thin films
TL;DR: In this article, the magnetic moment was observed in undoped semiconducting or insulating oxides to become ferromagnetic at room temperature on MgO substrates, where the magnetic field was applied parallel to the film plane.
Journal ArticleDOI
Magnetism in hafnium dioxide
J. M. D. Coey,Munuswamy Venkatesan,Plamen Stamenov,C. B. Fitzgerald,Lucio Strazzabosco Dorneles +4 more
TL;DR: In terms of substrate area it is typically in the range $150--400\phantom{\rule{0.3em}{0ex}}{\ensuremath{\mu}}_{\mathrm{B}}\phanthem{nm}}^{-}2} as discussed by the authors.
Journal ArticleDOI
Ferromagnetism driven by intrinsic point defects in HfO(2).
TL;DR: Ab initio electronic structure calculations using density functional theory show that isolated cation vacancy sites in HfO(2) lead to the formation of high-spin defect states, which appear to be ferromagnetically coupled with a rather short range magnetic interaction, resulting in a ferromagnetic ground state for the whole system.
Journal ArticleDOI
The quest for dilute ferromagnetism in semiconductors: Guides and misguides by theory
TL;DR: Theoretical methods have greatly influenced experiment in search of the elusive marriage between semiconductor electronics and magnetism, and the development of spintronics as mentioned in this paper, but realizing the limitations and strengths of theoretical approaches promises a straighter course.