Journal ArticleDOI
Room temperature ferromagnetism in HfO2 films
TLDR
In this article, HfO2 films were produced by sputter deposition in the substrate temperature (Ts) range of room temperature (RT)−300 C and their structural, magnetic, and electrical properties were evaluated.Abstract:
HfO2 films were produced by sputter deposition in the substrate temperature (Ts) range of room temperature (RT)−300 °C and their structural, magnetic, and electrical properties were evaluated. The results indicate that the HfO2 films crystallize in the monoclinic structure and are oriented along the (−111) direction. Magnetization measurements (300–1.8 K) evidence their RT ferromagnetism. The effect of Ts is significant on the magnetic moment (M) and coercivity (Hc). M and Hc values enhanced with increasing Ts due to formation of oxygen vacancies. Increase in the temperature from 150 to 300 K decreases Hc without any transition, indicating that the Curie temperature of HfO2 films is higher than RT. Electrical measurements indicate that the HfO2 films are semiconducting.read more
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Theoretical investigations of oxygen vacancy effects in nickel-doped zirconia from ab initio XANES spectroscopy at the oxygen K-edge
Dick Hartmann Douma,Lodvert Tchibota Poaty,Alessio Lamperti,Stephane Kenmoe,A.T. Raji,Alberto Debernardi,Bernard M'Passi-Mabiala +6 more
TL;DR: In this article , the authors present theoretical X-ray absorption near-edge structure (XANES) spectra at the K-edge of oxygen in zirconia containing Ni dopant atoms and O vacancies at varying concentrations.
Journal ArticleDOI
Role of position specific Ga and N vacancy related defects by ion irradiation in tailoring the ferromagnetic properties of thin GaN films: An experimental and first principle-based study
Sharmistha Dey,Preetam Singh,Vikash Mishra,Neetesh Dhakar,Sunil Kumar,Fouran Singh,P. C. Srivastava,Santanu Ghosh +7 more
TL;DR: In this paper , the variation in ferromagnetism caused by position-specific point defects in GaN (100 nm) thin films is reported, and the authors observe a systematic variation of magnetic properties after 300 KeV Xe+ ion irradiation with different fluences.
References
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TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
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TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
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High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
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Alternative dielectrics to silicon dioxide for memory and logic devices
TL;DR: Development of higher permittivity dielectrics for dynamic random-access memories serves to illustrate the magnitude of the now urgent problem of identifying alternatives to silicon dioxide for the gate dielectric in logic devices, such as the ubiquitous field-effect transistor.