Journal ArticleDOI
Self-organized SiC nanostructures on silicon
V. Cimalla,Alexander Schmidt,Ch. Foerster,Konstantinos Zekentes,Oliver Ambacher,Jörg Pezoldt +5 more
TLDR
In this article, the authors demonstrate a lateral ordering of SiC dots in linear chains and in dense dot arrays on Si(001) and Si(111) substrates by applying atomic force microscopy.About:
This article is published in Superlattices and Microstructures.The article was published on 2004-07-01. It has received 11 citations till now. The article focuses on the topics: Nucleation & Silicon.read more
Citations
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Journal ArticleDOI
Low temperature self-agglomeration of metallic Ag nanoparticles on silica sol?gel thin films
TL;DR: A facile sol-gel synthesis for self-agglomeration of metallic silver nanoparticles, with fcc crystalline structure, on the silica surface in a low annealing temperature has been introduced as discussed by the authors.
Journal ArticleDOI
Thermal effects in the size distribution of SiC nanodots on Si(111)
TL;DR: In this article, the formation of nanoscopic structures on Si(111) from wafers with a high bulk C concentration was investigated using scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and X-ray Photoelectron spectroscope (XPS).
Journal ArticleDOI
Nano-structures in YSZ(1 0 0) surfaces: Implications for metal deposition experiments
TL;DR: In this article, the surface morphology of yttria stabilized zirconia (YSZ) was examined by AFM and XPS before and after thermal annealing in air to 1000°C.
Journal ArticleDOI
Silicon carbide nanocrystals growth on Si(1 0 0) and Si(1 1 1) from a chemisorbed methanol layer
TL;DR: In this article, the internal structure, crystallinity and epitaxy of nanocrystals grown on Si(1.0.0) were studied using cross-sectional transmission electron microscopy (XTEM), methanol adsorption and surface evolution using scanning tunnelling microscopy.
Journal ArticleDOI
SEM/EDS study of metal-assisted oxide desorption
TL;DR: In this paper, stronglyenhanced desorption of a thick (100 nm) silicon oxide layer by pre-sputtering of a thin germanium surface film was observed under high-temperature vacuum annealing conditions.
References
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Journal ArticleDOI
Photoluminescence features on the Raman spectra of quasistoichiometric SiC nanoparticles: Experimental and numerical simulations
Abdelhadi Kassiba,Malgorzata Makowska-Janusik,Malgorzata Makowska-Janusik,Johann Bouclé,Jean-François Bardeau,Alain Bulou,Nathalie Herlin-Boime +6 more
TL;DR: In this paper, visible photoluminescence (PL) broad bands are observed in the Raman spectra of SiC nanoparticles (np-SiC) with diameters ranging from 10 to 25 nm.
Journal ArticleDOI
Initial stages in the carbonization of (111)si by solid-source molecular beam epitaxy
V. Cimalla,Th. Stauden,Gernot Ecke,F. Scharmann,G. Eichhorn,Jörg Pezoldt,S. Sloboshanin,J. A. Schaefer +7 more
TL;DR: In this paper, the initial stages of silicon carbide growth were observed by in situ reflection high-energy electron diffraction, and a thin silicon-carbon alloy was formed by diffusion of carbon into the surface near the region with a concentration exceeding the bulk solubility in silicon.
Journal ArticleDOI
Epitaxial growth of 3C-SiC on Si(001) using hexamethyldisilane and comparison with growth on Si(111)
TL;DR: In this article, a single crystalline 3C-SiC on Si(001) was grown using a two-step growth technique using hexamethyldisilane as the source and a H 2 /Ar gas mixture as the carrier gas.
Journal ArticleDOI
Investigation of the nucleation and growth of SiC nanostructures on Si
F. Scharmann,P. Maslarski,W. Attenberger,Jörg K. N. Lindner,Bernd Stritzker,Th. Stauden,Jörg Pezoldt +6 more
TL;DR: Using in situ reflection high energy electron diffraction (RHEED), ex situ atomic force microscopy (AFM) and transmission electron microscopy, the early stages of SiC growth on Si during the carbonisation were investigated in a solid source molecular beam epitaxy equipment as mentioned in this paper.
Journal ArticleDOI
Precipitation of β-SiC in Si1−yCy alloys
TL;DR: The infrared modes of annealed Si1−yCy alloys were studied experimentally and theoretically in this paper, and it was shown that small (1 nm) 3C−SiC coherent precipitates may actually produce a mode at 725 cm−1.
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X. Deng,M. Krishnamurthy +1 more