Patent
Short channel CMOS on 110 crystal plane
TLDR
In this article, a monocrystalline silicon substrate having a (110) crystal plane is prepared and a CMOS transistor is formed on this substrate, where the channel length is 1.5 μm or less and the velocity saturation phenomenon of electrons is outstanding.Abstract:
A monocrystalline silicon substrate having a (110) crystal plane is prepared. A CMOS transistor is formed on this substrate. An N channel MOS transistor and a P channel MOS transistor are formed in the surface of the semiconductor substrate. In each of these transistors the channel length is 1.5 μm or less and the velocity saturation phenomenon of electrons is outstanding.read more
Citations
More filters
Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Finfet SRAM cell using low mobility plane for cell stability and method for forming
TL;DR: In this paper, the authors presented a method for forming the same that results in Fin Field Effect Transistors having different gains without negatively impacting device density, which is of particular application to the design and fabrication of a Static Random Access Memory (SRAM) cell.
Patent
Method of Fabricating A Semiconductor Device
Shunpei Yamazaki,Hisashi Ohtani +1 more
TL;DR: In this paper, a semiconductor device with high reliability is provided using an SOI substrate using SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used.
Patent
Semiconductor method and device with mixed orientation substrate
TL;DR: In this article, a semiconductor device is defined as a first transistor being formed in the semiconductor material of the first crystal orientation, and a second transistor having the second crystal orientation.
Patent
Method of Manufacturing a Semiconductor Device
Masaaki Hiroki,Shunpei Yamazaki +1 more
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
References
More filters
Journal ArticleDOI
Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces
TL;DR: In this paper, the field-effect mobility of electrons in inversion layers of Si as functions of the crystalline orientation of the surface and of the azimuthal direction of the current path within the layers is reported.
Patent
Recrystallized CMOS with different crystal planes
Masaaki Aoki,Toshiaki Masuhara,Terunori Warabisako,Shoji Hanamura,Yoshio Sakai,Seiichi Isomae,Satoshi Meguro,Shuji Ikeda +7 more
TL;DR: In this paper, a CMOS IC is formed on a semiconductor crystalline surface having a plane azimuth (110) or (023) or of a plane angle close to or in parallel with the above planes, in order to increase the speed of operation.
Journal ArticleDOI
Drift-Velocity Saturation of Holes in Si Inversion Layers
Patent
Complementary field-effect-type semiconductor device
TL;DR: In this paper, a complementary field effect transistor with N and P channels lying along the main surface of the substrate and oriented in such a way that the direction of current through one conductivity-type channel or channels is at right angles to the direction through the opposite conductivity -type channels or channels.
Patent
Preferred device orientation on integrated circuits for better matching under mechanical stress
TL;DR: In this paper, a system including matched semiconductor elements in a monolithic integrated circuit together with an inexpensive encapsulation is described, which is achieved by predetermined placement and orientation of the matched components on the semiconductor element.