Journal ArticleDOI
Silicon nitride/(NH4)2Sx passivation of n-GaAs to unpin the Fermi level
K. Remashan,K.N. Bhat +1 more
TLDR
In this paper, a metal-insulator-semiconductor (MIS) structure is fabricated on an n-type GaAs sample and annealed at 450/spl deg/C in nitrogen for 5 min.Abstract:
Silicon nitride is deposited by the direct plasma enhanced chemical vapour deposition (PECVD) technique at a low power on an n-type GaAs sample treated with (NH/sub 4/)/sub 2/S/sub x/. Metal-insulator-semiconductor (MIS) structures are fabricated on this sample and annealed at 450/spl deg/C in nitrogen for 5 min. The 1 MHz capacitance-voltage (C-V) characteristics of these devices demonstrate accumulation, depletion and inversion regions. The interface state density (D/sub it/) estimated from the 1 MHz C-V curve using the high frequency method has shown that the minimum D/sub it/ achieved is /spl sim/4/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/.read more
Citations
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Journal ArticleDOI
Some effects of (NH4)2Sx treatment of n-GaAs surface on electrical characteristics of metal-SiO2–GaAs structures
TL;DR: In this article, the authors performed measurements of the frequency dependence of MIS capacitance and conductance for the Au/Pd/Ti-SiO 2 -GaAs structures.
Journal ArticleDOI
GaAs passivation by low-frequency plasma-enhanced chemical vapour deposition of silicon nitride
TL;DR: In this paper, the (NH4)2S/SixNy passivation of GaAs by silicon nitride (sixNy) deposition using low-frequency PECVD was presented.
Journal ArticleDOI
Infrared Energy Harvesting in Millimeter-Scale GaAs Photovoltaics
TL;DR: The design and characterization of millimeter-scale GaAs photovoltaic cells are presented and highly efficient energy harvesting in the near infrared (NIR) is demonstrated.
Journal ArticleDOI
Fabrication of (NH4)2S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition
TL;DR: In this article, metal-insulator-semiconductor (MIS) capacitors were fabricated on n-GaAs(100) substrate using (NH4)2S surface passivation and low-frequency plasma-enhanced chemical vapor deposited silicon nitride as gate insulators.
Journal ArticleDOI
Electrical properties of SiO2–(n) GaAs interface on the basis of measurements of MIS structure capacitance and conductance
TL;DR: In this paper, the Au/Pd/Ti/SiO2-GaAs structures with PECVD deposited insulator layers have been investigated and the measurements of capacitancevoltage characteristics at different frequencies as well as the frequency dependence of MIS capacitance and conductance at fixed gate voltages have been performed.
References
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Book
Gallium arsenide : materials devices and circuits
M. J. Howes,D. V. Morgan +1 more
TL;DR: The Physical and Electronic Properties of GaAs Growth of Bulk GaAs Epitaxial Growth of GAAs Etching and Surface Preparation of GaAS for Device Fabrication Ion Implantation and Damage in GaAs Metallizations for GaAs Devices and Circuits Metal-Insulator-GaAs Structures Transferred Electron Devices GaAs IMPATT Diodes GaAs MESFETs GaAs Optoelectronic Devices GaAS Microwave Monolithic Circuits GaAs Digital Integrated Circuit Technology Index
Journal ArticleDOI
Sulfur as a surface passivation for InP
R. Iyer,R. R. Chang,D. L. Lile +2 more
TL;DR: In this article, the use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near-ideal passivated surface prior to chemical vapor deposition of SiO2 was investigated.
Journal ArticleDOI
Internal Photoemission and X-Ray Photoelectron Spectroscopic Studies of Sulfur-Passivated GaAs
Kenji Sato,Hideaki Ikoma +1 more
TL;DR: In this paper, the effect of sulfur passivation on the GaAs surface and degradation of the surface exposed to air ambient after the passivation was investigated and it was shown that the reverse bias dependence of the Schottky barrier height was very small in the as-sulfur-treated sample and was mainly explained by the image force lowering effect.
Journal ArticleDOI
Photoluminescence studies on over‐passivations of (NH4)2Sx‐treated GaAs
S. Shikata,H. Hayashi +1 more
TL;DR: In this article, the photoluminescence measurements of over-passivation films of silicon nitride (SiN) and silicon dioxide (SiO2) on (NH4)2Sx-treated GaAs deposited by various kinds of systems were studied with photoluminance measurements.
Journal ArticleDOI
Effect of light irradiation on sulfide-treated GaAs with SiO2 deposition
TL;DR: The degradation mechanism of sulfide-treated ad SiO 2 deposited GaAs has been studied in this paper, where the sulfide treatment removes the oxide of GaAs and Ga-dangling bonds, and increases the intensity of photoluminescence.