scispace - formally typeset
Journal ArticleDOI

Sol-Gel Preparation of Transparent and Conductive Aluminum-Doped Zinc Oxide Films with Highly Preferential Crystal Orientation

Reads0
Chats0
TLDR
In this article, transparent aluminum-doped zinc oxide (ZnO) films were prepared via the sol-gel method on silica-glass substrates from 2-methoxyethanol solutions of zinc acetate and aluminum chloride that contained monoethanolamine.
Abstract
Transparent aluminum-doped zinc oxide (ZnO) films were prepared via the sol-gel method on silica-glass substrates from 2-methoxyethanol solutions of zinc acetate and aluminum chloride that contained monoethanolamine. Dip coating was conducted at room temperature, with substrate withdrawal rates of 1.2-7.0 cm/min. After each deposition, the films were heat-treated in air at 200°-450°C for 10 min (pre-heat-treatment). After six to fourteen layers had been deposited, the films were then subjected to annealing in air at 500°-800°C for 1 h (the first post-heat-treatment), followed by annealing in nitrogen at 500°-700°C for 15 min to 4 h (the second post-heat-treatment). All the films obtained were transparent and showed only an extremely sharp ZnO (002) peak in the X-ray diffractometry (XRD) patterns. The effects of the aluminum content, the substrate withdrawal speed, and the heat-treatment conditions on the electrical resistivity of the films were studied. All these factors strongly affected the resistivity. The lowest resistivity value (6.5 10-3 Omegacm) was achieved in a film that contained 0.5 at.% aluminum, prepared with a low substrate withdrawal speed (1.2 cm/min), and a pre-heat-treatment of individual layer at 400°C in air and a post-heat-treatment of the entire film at 600°C in air, followed by a post-heat-treatment at 600°C in nitrogen. These preparation parameters also affected the degree of crystal orientation, which was revealed by the intensity of the ZnO (002) XRD peak. Higher crystal orientation was effective in reducing the film resistivity, whereas the higher grain-packing density and possible aluminum segregation were thought to have positive and negative effects, respectively, in reducing the resistivity.

read more

Citations
More filters
Journal ArticleDOI

Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films

TL;DR: In this article, the effect of substrate-induced strain in polycrystalline ZnO thin films on different substrate, e.g., GaN epilayer, sapphire (0001), quartz glass, Si(111)∕SiO2, and glass deposited by sol-gel process, has been investigated by x-ray diffraction, scanning electron microscope, electrical resistivity, and photoluminescence measurements.
Journal ArticleDOI

Transparent conducting ZnO:Al, In and Sn thin films deposited by the sol–gel method

TL;DR: In this article, the effects of aluminum, indium and tin dopants on the microstructure and electrical properties of ZnO thin films prepared on silica glass substrates by the sol-gel method were investigated.
Journal ArticleDOI

Solution processing of transparent conductors: from flask to film

TL;DR: This critical review focuses on the solution deposition of transparent conductors with a particular focus on transparent conducting oxide (TCO) thin-films, with an introduction into the applications of and material criteria for TCOs.
Journal ArticleDOI

Oriented ZnO thin films synthesis by sol–gel process for laser application

TL;DR: In this paper, a systematic study of the key parameters that influence the texture and preferential orientation of films deposited by sol-gel procedures (precursor, solvent and additive nature and concentration, coating and heat treatment conditions).
Journal ArticleDOI

Electrical and optical properties of Al-doped ZnO thin films by sol–gel process

TL;DR: In this paper, the electrical and optical properties of al-doped ZnO thin films with post-deposition heating temperature were investigated and the preferred c-axis orientation along the (0-0-2) plane was enhanced with increasing postdeposition temperature and the surface of the films showed a uniform and nano-sized microstructure.
References
More filters
Journal ArticleDOI

Sol-gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution

TL;DR: In this article, a homogeneous and stable solution was prepared by dissolving the zinc acetate in a solution of 2methoxyethanol and monoethanolamine, which was obtained by preheating the dip-coating films at temperatures from 200° − 500°C for 10 min after each coating and postheating at temperatures between 500° − 800°c for 1 h.
Journal ArticleDOI

Aluminum-doped zinc oxide transparent conductors deposited by the sol-gel process

TL;DR: In this paper, thin films of transparent conducting aluminum-doped ZnO have been deposited using a sol-gel process and the dependence of electrical characteristics upon aluminum concentration in the films and upon post-deposition heat treatment in vacuum was examined.
Journal ArticleDOI

Substrate temperature dependence of electrical properties of ZnO:Al epitaxial films on sapphire (12̄10)

TL;DR: In this article, ZnO:Al films were deposited on (1210) oriented sapphire substrates heated up to 400°C by rf magnetron sputtering from a znO target mixed with Al2O3 of 2 wt%.
Journal ArticleDOI

Preparation of ZnO Films with Preferential Orientation by Sol-Gel Method

TL;DR: In this paper, the effects of heating temperature and ethanolamines on the film morphology, grain size distribution and crystallographic orientation are discussed based on X-ray diffraction and scanning electron microscopy.
Journal ArticleDOI

Microstructure of TiO2 and ZnO Films Fabricated by the Sol-Gel Method

TL;DR: In this paper, columnar TiO2 and zinc oxide films were fabricated by spin-on and dip-coating methods, and they exhibited columnar grains when the single coating was thin, ∼10 nm.
Related Papers (5)