Journal ArticleDOI
Solid phase epitaxial regrowth of ion beam-amorphized α-quartz
TLDR
In this paper, solid phase epitaxial growth of ion beam-amorphized α-quartz has been studied by means of Rutherford backscattering spectrometry in channeling geometry.Abstract:
Solid phase epitaxial growth of ion beam-amorphized α-quartz has been studied by means of Rutherford backscattering spectrometry in channeling geometry α-quartz single crystals were irradiated with Cs+ and Xe+ ions and annealed in air or in vacuum at 500–900 °C Complete epitaxial regrowth has been observed in the Cs-irradiated samples, after 875 °C annealing in air On the other hand, vacuum annealing provided only incomplete regrowth of the amorphous layer, while Xe-irradiated α-quartz could not be regrown up to 900 °C The behavior of Cs in the recrystallization process is discussed in terms of the SiO2-network topologyread more
Citations
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Journal ArticleDOI
Amorphization and recrystallization of covalent tetrahedral networks
TL;DR: In this paper, a review of recent studies on the amorphization and recrystallization of light covalent ceramics SiC, Si3N4 and SiO2 is presented.
Journal ArticleDOI
Ion-beam induced amorphization and dynamic epitaxial recrystallization in α-quartz
TL;DR: In this paper, the authors evaluated ion-beam induced damage in α-quartz and its dynamic annealing behavior in the temperature range between 80 and 1050 K using Rutherford backscattering spectrometry in channeling geometry.
Journal ArticleDOI
Ion implantation of Cs into silicon carbide: Damage production and diffusion behaviour
TL;DR: In this paper, the effects induced by the implantation of a typical fission product (Cs) into silicon carbide (SiC) and its diffusion behavior during thermal treatments were examined.
Journal ArticleDOI
Epitaxial crystallization of amorphous SiO2 films deposited on single-crystalline α-quartz
TL;DR: In this article, the solid phase epitaxial growth of thin amorphous SiO2 films deposited by electron gun evaporation on single-crystalline α-quartz substrates was reported.
Journal ArticleDOI
Epitaxial crystallization of keV-ion-bombarded α quartz
TL;DR: In this paper, the epitaxial recrystallization of amorphized layers was achieved after alkali irradiation and annealing in air in the temperature range 650-875°C.
References
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Journal ArticleDOI
A semiautomatic algorithm for rutherford backscattering analysis
TL;DR: In this paper, nonlinear least squares techniques have been applied to Rutherford backscattering spectrometry (RBS), allowing routine multivariable fits of simulated spectra to experimental data.
Journal ArticleDOI
Kinetics of solid phase crystallization in amorphous silicon
G.L. Olson,J.A. Roth +1 more
TL;DR: In this paper, the authors examined the crystallization behavior of a-Si over the temperature range from 500 °C to ∼ 1380°C and showed that the random crystallization process is a well-behaved function of temperature over that temperature range with an activation energy of 4 eV.
Book
Ion beam modification of insulators
Paolo Mazzoldi,George W. Arnold +1 more
TL;DR: In this article, Biersack et al. presented a table of ion ranges and energy deposition in insulators, and the role of defect creation in the Aqueous Dissolution of Ion-Bombarded Inorganic Insulators.
Journal ArticleDOI
Energy calibration of the 500 kV heavy ion implanter ionas
TL;DR: In this paper, the gamma ray yield function of (p, αγ) and resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen.
Journal ArticleDOI
Structural freedom, topological disorder, and the irradiation-induced amorphization of ceramic structures
TL;DR: In this article, a correlation between the critical accumulated energy deposited per atom and the calculated structural freedom for the structure type irradiated over a wide range of non-metal structural types was established.