Ion-beam induced amorphization and dynamic epitaxial recrystallization in α-quartz
08 Mar 1999-Journal of Applied Physics (American Institute of Physics)-Vol. 85, Iss: 6, pp 3120-3123
TL;DR: In this paper, the authors evaluated ion-beam induced damage in α-quartz and its dynamic annealing behavior in the temperature range between 80 and 1050 K using Rutherford backscattering spectrometry in channeling geometry.
Abstract: We report on the evaluation of ion-beam induced damage in α-quartz and its dynamic annealing behavior in the temperature range between 80 and 1050 K using Rutherford backscattering spectrometry in channeling geometry. The results illustrate that the critical temperature for inhibiting amorphization during irradiation is about Tc≈940 K. The critical fluence φc for amorphization is independent of the temperature up to 550 K, but strongly increases at higher temperatures. The activation energy for the diffusion of defects in the collision cascade or at the amorphous/crystalline interface is found to be 0.28±0.02 eV. The dynamic annealing mechanism is explained by the vacancy out-diffusion model of Morehead and Crowder.
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TL;DR: In this paper, the effect of Ar ion irradiation on the reactivity of crystalline and amorphous quartz to alkali has been examined for clarifying whether radiation from nuclear reactors accelerates the degradation of concrete by inducing alkali-silica reaction of aggregates.
Abstract: The effect of Ar ion irradiation on the reactivity of crystalline and amorphous quartz to alkali has been examined for clarifying whether radiation from nuclear reactors accelerates the degradation of concrete by inducing alkali-silica reaction of aggregates. Distorted amorphous quartz generated on the surface of quartz by irradiation of a 200 keV Ar ion beam is at least 700 times and 2.5 times more reactive to alkali than crystalline and regular amorphous quartz, respectively. The high reactivity of the distorted amorphous quartz indicates that the degradation of concrete by alkalsilica reaction is possible to be induced by nuclear radiation even the aggregates are inert to alkali before the irradiation. The critical radiation doses for the degradation of aggregates containing crystalline quartz are estimated to be 5 × 1019 n/cm2 for fast neutrons with energy >0.1 MeV, and 5×1011 Gy for beta and gamma rays. They are 1×1019 n/cm2 and 0.5tiems;1011 Gy, respectively for aggregates containing amorphous quartz.
56 citations
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TL;DR: In this article, the solid phase epitaxial growth of thin amorphous SiO2 films deposited by electron gun evaporation on single-crystalline α-quartz substrates was reported.
Abstract: The epitaxial α-quartz thin film could be a promising material for fabricating optical devices because of its unique optical and mechanical properties and processing advantages compared to bulk materials This letter reports on the solid-phase epitaxial growth of thin amorphous SiO2 films deposited by electron gun evaporation on single-crystalline α-quartz substrates This was achieved by high-dose Cs+-ion implantation and subsequent thermal annealing in air Also, a thin amorphous layer produced by Si+-ion implantation on α-quartz was epitaxially regrown, thus indicating that the epitaxy is independent of the preparation history of the amorphous layer The results are explained on the basis of network modifications induced by alkali and oxygen in the SiO2 structure
22 citations
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TL;DR: In this paper, a single-crystalline α-quartz with 120 keV Ge+ion implantation under the conditions of dynamic solid phase epitaxial regrowth has been studied as function of ion fluence and substrate temperature.
Abstract: Doping single-crystalline α-quartz with 120keV Ge+-ion implantation under the conditions of dynamic solid phase epitaxial regrowth has been studied as function of ion fluence and substrate temperature. In particular, the light emitting properties possibly suitable for optoelectronic devices have been investigated by measuring cathodoluminescence spectra for implantation temperatures from 300 to 1223K and for analyzing temperatures from 10−300K. Rutherford backscattering channeling analysis showed that the Ge implantation produced amorphous layers varying in depth with temperature. At a fluence of 7×1014Ge-ions∕cm2 and an implantation temperature of 1073K, Ge implantation is accompanied by a strong increase in the luminescence intensity of a violet band, which we associate with Ge-related defects or Ge clusters. This violet band is very stable and has a long lifetime of 6μs. All the other bands observed are connected to known oxygen defect centers in the SiO2 network.
19 citations
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TL;DR: In this paper, ion track radii were analyzed using small-angle X-ray scattering, revealing an increase in the ion track radius of approximately 0.1 nm per 100 K increase in irradiation temperature.
Abstract: Ion tracks were created in natural quartz and fluorapatite from Durango, Mexico, by irradiation with 2.2 GeV Au ions at elevated temperatures of up to 913 K. The track radii were analysed using small-angle X-ray scattering, revealing an increase in the ion track radius of approximately 0.1 nm per 100 K increase in irradiation temperature. Molecular dynamics simulations and thermal spike calculations are in good agreement with these values and indicate
that the increase in track radii at elevated irradiation temperatures is due to a lower energy required to reach melting of the material. The post-irradiation annealing behaviour studied for apatite remained unchanged.
19 citations
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TL;DR: In this article, the migration of oxygen in ion-beam-amorphized c-SiO2 (α-quartz) was investigated by means of nuclear reaction analysis using the resonant reaction 18O(p,α)15N for oxygen depth profiling.
Abstract: The migration of oxygen in ion-beam-amorphized c-SiO2 (α-quartz) was investigated by means of nuclear reaction analysis using the resonant reaction 18O(p,α)15N for oxygen depth profiling. Only very small amounts of oxygen were observed to diffuse in crystalline or in Xe+-ion beam-amorphized α-quartz after high-temperature annealing. However, a dramatic migration of oxygen occurs in Cs+-implanted α-quartz in the same temperature range (600–900 °C), where Cs diffuses out of the amorphized layer and epitaxial recrystallization occurs. These results point out to a strong correlation of all these processes. A mechanism to explain the observed indiffusion of 18O is proposed and is related to the Cs migration and the topological modification to achieve epitaxial regrowth of the SiO2 matrix.
19 citations
References
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01 Jan 1987
TL;DR: In this article, Biersack et al. presented a table of ion ranges and energy deposition in insulators, and the role of defect creation in the Aqueous Dissolution of Ion-Bombarded Inorganic Insulators.
Abstract: 1. Ion Ranges and Energy Deposition in Insulators (J.P. Biersack). 2. The Sputtering of Insulators (R. Kelly). 3. Characterization Techniques for Ion Bombarded Insulators (J.A. Borders). 4. Defect Creation in Ion Bombarded Inorganic Insulators (A. Perez, P. Thevenard). 5. Ion Beam Modification of Glasses (G.W. Arnold, P. Mazzoldi). 6. The Mechanical and Tribological Properties of Ion Implanted Ceramics (C.J. McHargue). 7. Synthesis of Dielectric Layers in Silicon by Ion Implantation (I.H. Wilson). 8. Ion Beam Effects in Organic Molecular Solids and Polymers (T. Venkatesan, L. Calcagno, B.S. Elman, G. Foti). 9. Condensed Gases (W.L. Brown). 10. Optoelectronic Materials (G. Gotz). 11. Ferromagnetic Garnets (P. Gerard). 12. Nuclear Waste Materials (Hj. Matzke). 13. Role of Defects on the Aqueous Dissolution of Ion-Bombarded Insulators (G. Della Mea, J.-C. Dran, J.-C. Petit). 14. Chemical Effects of Ion Bombardment (G.K. Wolf, K. Roessler). 15. Ion Beam Effects on Thin Film Adhesion (J.E.E. Baglin). 16. Astrophysical Implications of Ions Incident on Insulators (L.J. Lanzerotti, R.E. Johnson). Subject Index. Appendix: Tables of Ion Ranges in Insulators.
415 citations
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IBM1
TL;DR: In this paper, a phenomenological model was proposed to account for the variation of the critical dose required to produce a continuous amorphous layer by ion bombardment with ion, target, temperature, and, with minor additional assumptions, dose rate.
Abstract: The effective annealing of ion implantations in Si is aided by the formation of continuous amorphous layer. The amorphous layer regrows epitaxially at 500–600°C and incorporates the dopant in an electrically active, uncompensated form. A phenomenological model is proposed which, with adjustable parameters, accounts for the variation of the critical dose required to produce a continuous amorphous layer by ion bombardment with ion, target, temperature, and, with minor additional assumptions, dose rate.
396 citations
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01 May 1985-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, the gamma ray yield function of (p, αγ) and resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen.
Abstract: Gamma ray yield functions of (p, αγ) and (p, γ) resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen. The energy spread of the proton beam was found to vary linearly with the accelerating voltage from ΔE(200 keV) = 55 eV fwhm to ΔE(500 keV) = 105 eV; it is made up by a 0.012% high voltage ripple and the Doppler broadening of the resonances due to the thermal motion of the target nuclei. A long term stability of the proton energy of Applications of the accelerator for the remeasurement of some resonance energies and widths and for depth profiling of light implanted ions in metals by the resonance broadening method will be briefly discussed.
291 citations
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TL;DR: In this paper, the ion-beam-induced epitaxial crystallization (IBIEC) and planar amorphization of amorphous Si (a-Si) layers onto single-crystal Si substrates is reviewed.
Abstract: The ion-beam-induced epitaxial crystallization (IBIEC) and planar amorphization of amorphous Si (a-Si) layers onto single-crystal Si substrates is reviewed. In particular, the dependence of the process on substrate temperature, on substrate orientation and on the energy deposited by the impinging ions into electronic and elastic collisions is treated in detail and discussed. Emphasis is also given to the influence of impurities on IBIEC, where a variety of different phenomena are observed. For instance, fast diffusers, such as Au, are seen to be swept by the moving c-a boundary and present intriguing segregation profiles. Slow diffusers such as As or O, on the other hand, have not enough mobility to move over long-range distances even in the presence of irradiation, but they can strongly modify the kinetics of IBIEC. Dopants such as B, P and As, for example, enhance the ion-induced growth rate by a factor of 2–3, while O retards it. It is also shown that by decreasing the substrate temperature (or by increasing the ion flux) IBIEC can be reversed resulting in a planar layer-by-layer amorphization. This phenomenon evidences the unique non-equilibrium features of ion-assisted phase transitions in silicon which are the result of a dynamic balance between defect production rate and defect annihilation rate. These data are discussed, mainly in comparison with the purely thermally activated growth of a-Si and a possible explanation of the observed phenomena is presented in terms of a simple model. Finally, new possible applications of the phenomenon, such as the ion-induced regrowth of deposited Si layers and of deposited GeSi heterostructures, are illustrated, demonstrating the high potentialities of ion-beam processing in producing epitaxial layers in a non-conventional manner.
152 citations
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TL;DR: A detailed investigation of ion-beam induced atomic transport through bi-layer interfaces of low and medium-Z metals and their nitrides as a function of the irradiation conditions and the materials combinations allowed us to distinguish between five different mixing mechanisms.
Abstract: A detailed investigation of ion-beam induced atomic transport through bi-layer interfaces of low- and medium-Z metals and their nitrides as a function of the irradiation conditions and the materials combinations allowed us to distinguish between five different mixing mechanisms. In the strongly bound nitrides ballistic transport dominates the atomic intermixing, while for the metallic bi-layers diffusion in local (light- and medium-mass ions) and global thermal spikes (very heavy ions) seems to be the major mixing mechanism. Heavy ions were also found to initiate end-of-range spikes even in systems where mixing in the recoil cascade is of purely ballistic character. Besides these athermal processes, irradiaion at higher temperatures may result in thermally activated radiation-enhanced diffusion .
114 citations