Journal ArticleDOI
Ion-beam induced amorphization and dynamic epitaxial recrystallization in α-quartz
TLDR
In this paper, the authors evaluated ion-beam induced damage in α-quartz and its dynamic annealing behavior in the temperature range between 80 and 1050 K using Rutherford backscattering spectrometry in channeling geometry.Abstract:
We report on the evaluation of ion-beam induced damage in α-quartz and its dynamic annealing behavior in the temperature range between 80 and 1050 K using Rutherford backscattering spectrometry in channeling geometry. The results illustrate that the critical temperature for inhibiting amorphization during irradiation is about Tc≈940 K. The critical fluence φc for amorphization is independent of the temperature up to 550 K, but strongly increases at higher temperatures. The activation energy for the diffusion of defects in the collision cascade or at the amorphous/crystalline interface is found to be 0.28±0.02 eV. The dynamic annealing mechanism is explained by the vacancy out-diffusion model of Morehead and Crowder.read more
Citations
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Possibility of radiation-induced degradation of concrete by alkali-silica reaction of aggregates
Tsuneki Ichikawa,Hitoshi Koizumi +1 more
TL;DR: In this paper, the effect of Ar ion irradiation on the reactivity of crystalline and amorphous quartz to alkali has been examined for clarifying whether radiation from nuclear reactors accelerates the degradation of concrete by inducing alkali-silica reaction of aggregates.
Journal ArticleDOI
Epitaxial crystallization of amorphous SiO2 films deposited on single-crystalline α-quartz
TL;DR: In this article, the solid phase epitaxial growth of thin amorphous SiO2 films deposited by electron gun evaporation on single-crystalline α-quartz substrates was reported.
Journal ArticleDOI
Temperature dependence of ion track formation in quartz and apatite
Daniel Schauries,Maik Lang,Olli H. Pakarinen,S. Botis,Boshra Afra,Matias Rodriguez,Flyura Djurabekova,Kai Nordlund,Daniel Severin,Markus Bender,Weixing Li,Christina Trautmann,Christina Trautmann,Rodney C. Ewing,Nigel Kirby,Patrick Kluth +15 more
TL;DR: In this paper, ion track radii were analyzed using small-angle X-ray scattering, revealing an increase in the ion track radius of approximately 0.1 nm per 100 K increase in irradiation temperature.
Journal ArticleDOI
Stable violet cathodoluminescence of α-quartz after Ge+ implantation at elevated temperature
TL;DR: In this paper, a single-crystalline α-quartz with 120 keV Ge+ion implantation under the conditions of dynamic solid phase epitaxial regrowth has been studied as function of ion fluence and substrate temperature.
Journal ArticleDOI
Oxygen migration during epitaxial regrowth in Cs + -irradiated α-quartz investigated by means of nuclear reaction analysis
TL;DR: In this article, the migration of oxygen in ion-beam-amorphized c-SiO2 (α-quartz) was investigated by means of nuclear reaction analysis using the resonant reaction 18O(p,α)15N for oxygen depth profiling.
References
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Ion beam modification of insulators
Paolo Mazzoldi,George W. Arnold +1 more
TL;DR: In this article, Biersack et al. presented a table of ion ranges and energy deposition in insulators, and the role of defect creation in the Aqueous Dissolution of Ion-Bombarded Inorganic Insulators.
Journal ArticleDOI
A model for the formation of amorphous Si by ion bombardment
F. F. Morehead,B. L. Crowder +1 more
TL;DR: In this paper, a phenomenological model was proposed to account for the variation of the critical dose required to produce a continuous amorphous layer by ion bombardment with ion, target, temperature, and, with minor additional assumptions, dose rate.
Journal ArticleDOI
Energy calibration of the 500 kV heavy ion implanter ionas
TL;DR: In this paper, the gamma ray yield function of (p, αγ) and resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen.
Journal ArticleDOI
Ion-beam-induced epitaxial crystallization and amorphization in silicon
Francesco Priolo,Emanuele Rimini +1 more
TL;DR: In this paper, the ion-beam-induced epitaxial crystallization (IBIEC) and planar amorphization of amorphous Si (a-Si) layers onto single-crystal Si substrates is reviewed.
Journal ArticleDOI
Ion-beam induced atomic transport through bi-layer interfaces of low- and medium-Z metals and their nitrides
TL;DR: A detailed investigation of ion-beam induced atomic transport through bi-layer interfaces of low and medium-Z metals and their nitrides as a function of the irradiation conditions and the materials combinations allowed us to distinguish between five different mixing mechanisms.