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Spin-filter device based on the Rashba effect using a nonmagnetic resonant tunneling diode.

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TLDR
Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the I-V curve of this device as a result of the spin-filtering effect.
Abstract
We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that a splitting of a peak should be observed in the I-V curve of this device as a result of the spin-filtering effect. The filtering efficiency exceeds 99.9% at the peak positions in the I-V curve.

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Journal ArticleDOI

Spintronics: Fundamentals and applications

TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
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Superconducting Dome in a Gate-Tuned Band Insulator

TL;DR: A large enhancement in the transition temperature Tc occurring at optimal doping in the chemically inaccessible low–carrier density regime is revealed, indicating that the superconducting dome may arise even in doped band insulators.
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Semiconductor Spintronics

TL;DR: Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role as mentioned in this paper, and is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism.
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The surfaces of bismuth: Structural and electronic properties

TL;DR: In this paper, the effect of the spin-orbit interaction on low-index surfaces of the group V semimetal bismuth has been studied and the main focus is on the geometric and electronic structure.
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