Journal ArticleDOI
Strain effect on band structure of InAlAs digital alloy
Reads0
Chats0
TLDR
In this article, the authors analyzed the strain effect on the band structure of the InAlAs digital alloy and found a positive relationship between minigaps and the band offset between bulk InAs and AlAs at the same position in k-space.Abstract:
Recently, InAlAs digital alloys have been shown to exhibit unique electronic dispersion properties, which can be used to make low-noise avalanche photodiodes. In this paper, the strain effect is analyzed for its impact on the band structure of the InAlAs digital alloy. Simulation using a tight binding model that includes the strain effect yields bandgap energies that are consistent with experimental results. The bandgap would be larger without strain. In addition, a positive relationship has been found between minigaps of the InAlAs digital alloy and the band offset between bulk InAs and AlAs at the same position in k-space.read more
Citations
More filters
Journal ArticleDOI
Characterization of band offsets in AlxIn1-xAsySb1-y alloys with varying Al composition
Jiyuan Zheng,Andrew H. Jones,Yaohua Tan,Ann Kathryn Rockwell,Stephen D. March,Sheikh Z. Ahmed,Catherine A. Dukes,Avik W. Ghosh,Seth R. Bank,Joe C. Campbell +9 more
TL;DR: In this paper, the valence band offsets in AlxIn1-xAsySb1-y with different Al compositions are analyzed by tight binding calculations and X-ray photoelectron spectroscopy measurements.
Journal ArticleDOI
Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate.
Seung Hyun Lee,M. Winslow,Christoph H. Grein,S. H. Kodati,Andrew H. Jones,D. R. Fink,P Das,Majeed M. Hayat,Theodore J. Ronningen,Joe C. Campbell,Sanjay Krishna +10 more
TL;DR: This work designs InGaAs/AlInAs SL APDs with three different SL periods to achieve the same composition as Al0.53As quaternary random alloy and demonstrates an APD with low k-value, to support the theoretical prediction.
Journal ArticleDOI
Full band Monte Carlo simulation of AlInAsSb digital alloys
Jiyuan Zheng,Sheikh Z. Ahmed,Yuan Yuan,Andrew H. Jones,Yaohua Tan,Ann Kathryn Rockwell,Stephen D. March,Seth R. Bank,Avik W. Ghosh,Joe C. Campbell +9 more
TL;DR: In this article, the authors investigated the band structure-related mechanisms that influence impact ionization and found that the mini-gaps in the conduction band do not inhibit electron impact ionisation.
Journal ArticleDOI
Simulations for InAlAs digital alloy avalanche photodiodes
Jiyuan Zheng,Yuan Yuan,Yaohua Tan,Yiwei Peng,Ann Kathryn Rockwell,Seth R. Bank,Avik W. Ghosh,Joe C. Campbell +7 more
TL;DR: In this paper, 3D band structure-based Monte Carlo simulations have been used to simulate InAlAs digital alloy avalanche photodiodes, and the simulated currentvoltage curve and excess noise factor fit well with experimental results.
Journal ArticleDOI
A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes
Sheikh Z. Ahmed,Samiran Ganguly,Yuan Yuan,Jiyuan Zheng,Yaohua Tan,Joe C. Campbell,Avik W. Ghosh +6 more
TL;DR: In this article, a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibrated to ab-initio Density Functional Theory (DFT) and Monte Carlo (MC) methods is presented.
References
More filters
Journal ArticleDOI
Band lineups and deformation potentials in the model-solid theory.
TL;DR: In this paper, a theoretical model is presented to predict the band offsets at both lattice-matched and pseudomorphic strained-layer interfaces, based on the local density functional pseudopotential formalism and the ''model solid approach'' of Van de Walle and Martin.
Journal ArticleDOI
Effects of extrinsic and intrinsic perturbations on the electronic structure of graphene : Retaining an effective primitive cell band structure by band unfolding
TL;DR: In this paper, a band unfolding technique was used to recover an effective primitive cell picture of the band structure of graphene under the influence of different types of perturbations, which involves intrinsic p...
Journal ArticleDOI
Extracting E Versus K Effective Band Structure from Supercell Calculations on Alloys and Impurities
TL;DR: In this paper, a computational method that maps the energy eigenvalues obtained from large supercell calculations into an effective band structure (EBS) and recovers an approximate $E(stackrel{P\vec{k})$ for alloys is described.
Journal ArticleDOI
Recent Advances in Avalanche Photodiodes
TL;DR: Recent advancements in the performance of avalanche photodiodes designed for fiber optic receivers, low-level ultra-violet detection, and Geiger-mode single photon detectors will be discussed.
Journal ArticleDOI
InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
Mohammed Zaknoune,B. Bonte,Christophe Gaquiere,Yvon Cordier,Y. Druelle,Didier Theron,Y. Crosnier +6 more
TL;DR: In this paper, a 0.15-/spl mu/m gate length device with a single delta/ doping exhibits a state-of-the-art current gain cut-off frequency F/sub t/ value of 125 GHz at V/sub ds/=1.5 V, an extrinsic transconductance of 650 mS/mm and a current density of 750 mA/mm associated to a high breakdown voltage of -13 V.