Journal ArticleDOI
Structural and electrical properties of Schottky barriers on n-GaN
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TLDR
Cr, Au and Ni Schottky barriers were formed on n-GaN and the parameters of the barriers (barrier height, electron affinity of GaN, and effective Richardson coefficient) were calculated from results of currentvoltage and capacitance-voltage measurements as discussed by the authors.About:
This article is published in Diamond and Related Materials.The article was published on 1997-08-01. It has received 24 citations till now. The article focuses on the topics: Schottky barrier & Auger electron spectroscopy.read more
Citations
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Journal ArticleDOI
Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics
Aaron R. Arehart,Brendan Jude Moran,James S. Speck,Umesh Mishra,Steven P. DenBaars,Steven A. Ringel +5 more
TL;DR: In this article, the impact of threading dislocation density on Ni∕n-GaN Schottky barrier diode characteristics was investigated using forward biased current-voltage-temperature (I-V-T) and internal photoemission (IPE) measurements.
Journal ArticleDOI
Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag
TL;DR: The Schottky barrier height is proportional to the metal work function, indicating that the Fermi level is not pinned at the GaN surface as discussed by the authors, which is a discrepancy between the work function of the metal and the resulting barrier height.
Journal ArticleDOI
Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures
TL;DR: In this paper, the branch-point energies of Si, the group-III nitrides AlN, GaN, and InN were determined from experimental valance-band offsets of their heterostructures.
Journal ArticleDOI
Semiconductor photoelectric converters for the ultraviolet region of the spectrum
T. V. Blank,Yu. A. Goldberg +1 more
TL;DR: In this paper, the parameters of starting wide gap semiconductors are given, physical foundations for photoelectric conversion and the principles of formation of ohmic contacts are described, characteristics of corresponding devices are given and the envisaged lines of further studies are outlined.
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Temperature variation of current–voltage characteristics of Au/Ni/n-GaN Schottky diodes
TL;DR: In this article, the concept of barrier inhomogeneity at the metal/semiconductor interface through a Gaussian distribution function was introduced and the basic diode parameters such as ideality factor and barrier height were extracted from electrical measurements.
References
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Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
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Study of schottky barriers on n-type gan grown by low-pressure metalorganic chemical-vapor-deposition
TL;DR: In this paper, the Schottky barrier heights of Pt and Pd on n-type GaN films were derived and compared with those of Au and Ti in previous reports.
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Schottky barriers on n-GaN grown on SiC
TL;DR: In this paper, the Schottky barriers were constructed by vacuum thermal evaporation of Cr, Au, and Ni and the electron affinity for GaN was determined using both C-V and I-V characteristics.
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Dielectric functions of wurtzite and zincblende structure GaN
TL;DR: In this article, the longitudinal frequency and wavevector dependent dielectric functions of zincblende and wurtzite structure GaN were calculated using band energies and wavefunctions generated in the framework of the empirical pseudopotential method.