Journal ArticleDOI
Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire
D. Kapolnek,X. H. Wu,B. Heying,Stacia Keller,Bernd Keller,Umesh K. Mishra,Steven P. DenBaars,James S. Speck +7 more
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TLDR
The structural evolution of epitaxial GaN layers grown on basal plane sapphire has been studied by atomic force microscopy, x-ray diffraction, and transmission electron microscopy (TEM).Abstract:
The structural evolution of epitaxial GaN layers grown on basal plane sapphire has been studied by atomic force microscopy (AFM), x‐ray diffraction, and transmission electron microscopy (TEM). High‐temperature growth (1050–1080 °C) on optimized nucleation layers leads to clear, specular films. AFM on the as‐grown surface shows evenly spaced monatomic steps indicative of layer by layer growth. AFM measurements show a step termination density of 1.7×108 cm−2 for 5 μm films. This value is in close agreement with TEM measurements of screw and mixed screw‐edge threading dislocation density. The total measured threading dislocation density in the 5 μm films is 7×108 cm−2.read more
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Substrates for gallium nitride epitaxy
L. Liu,James H. Edgar +1 more
TL;DR: In this paper, the structural, mechanical, thermal, and chemical properties of substrates used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films deposited on these substrates are reviewed.
Journal ArticleDOI
Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
TL;DR: In this paper, a phase separation of the InGaN layer was clearly observed in the emission spectra, in which blue and red emission peaks appeared, in terms of the temperature dependence of the LEDs.
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Wet etching of GaN, AlN, and SiC : a review
D. Zhuang,James H. Edgar +1 more
TL;DR: The wet etching of GaN, AlN, and SiC is reviewed in this paper, including conventional etching in aqueous solutions, electrochemical etch in electrolytes and defect-selective chemical etched in molten salts.
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Scattering of electrons at threading dislocations in GaN
TL;DR: In this paper, a model to explain the observed low transverse mobility in GaN by scattering of electrons at charged dislocation lines is proposed and the statistics of trap occupancy at different doping levels are investigated.
Journal ArticleDOI
Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial gan grown by metalorganic chemical-vapor deposition
TL;DR: In this article, the relationship between microstructure and luminescence efficiency for heteroepitaxial films of GaN grown on c-axis sapphire substrates by metalorganic chemical-vapor deposition was discussed.