Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure
Mantu K. Hudait,Michael Clavel,Patrick S. Goley,Yuantao Xie,Jean J. Heremans,Yuxuan Jiang,Zhigang Jiang,Dmitry Smirnov,Gary Sanders,Christopher J. Stanton +9 more
- Vol. 1, Iss: 5, pp 1099-1112
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TLDR
In this article, a double-period InAs/GaSb superlattice grown by solid-source molecular beam epitaxy is presented, which shows abrupt atomic transitions between each Sb- or As-containing epilayer.Abstract:
Properties of a double-period InAs/GaSb superlattice grown by solid-source molecular beam epitaxy are presented. Precise growth conditions at the InAs/GaSb heterojunction yielded abrupt heterointerfaces and superior material quality as verified by X-ray diffraction and transmission electron microscopy (TEM) analysis. Moreover, high-resolution TEM imaging and elemental composition profiling of the InAs/GaSb heterostructure demonstrated abrupt atomic transitions between each Sb- or As-containing epilayer. An 8 × 8 k·p model is used to compute the electronic band structure of the constituent long- and short-period superlattices, taking into account the effects of conduction and valence band mixing, quantum confinement, pseudomorphic strain, and magnetic field on the calculated dispersions. Magnetotransport measurements over a variable temperature range (390 mK to 294 K) show anisotropic transport exhibiting a striking magnetoresistance and show Shubnikov-de Haas oscillations, the latter being indicative of high quality material synthesis. The measurements also reveal the existence of at least two carrier populations contributing to in-plane conductance in the structure.read more
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Effects of Strain and Quantum Confinement in Optically Pumped Nuclear Magnetic Resonance in GaAs: Interpretation Guided by Spin-Dependent Band Structure Calculations
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Band-to-Band Transitions in InAs/GaSb Multi-Quantum-Well Structures Using k.p Theory: Effects of Well/Barrier Width and Temperature
S. B. Seyedein Ardebili,Jong Su Kim,J. Ha,T. Kang,Behnam Zeinalvand Farzin,Yeongho Kim,Sang Jun Lee +6 more
TL;DR: In this paper , the conduction and valence-confined energy levels and first band-to-band transition energies of a type-II InAs/GaSb multi-quantum-well at 77 K and room temperature for various well and barrier thicknesses were investigated.
References
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