Journal ArticleDOI
Study of a high contrast process for hydrogen silsesquioxane as a negative tone electron beam resist
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TLDR
In this article, an extensive study of parameters pertinent to electron beam lithography with hydrogen silsesquioxane as a negative tone electron beam resist is presented, with a developer concentration of 25% tetramethyl ammonium hydroxide and a baking temperature of 90°C.Abstract:
An extensive study of parameters pertinent to electron beam lithography with hydrogen silsesquioxane as a negative tone electron beam resist is presented. With higher developer concentrations contrast and reproducibility are improved significantly at the expense of lower sensitivity. In a similar way extended delays between the baking and exposure degrade the sensitivity but increase the contrast. In contrast, at higher baking temperatures the sensitivity is improved but the contrast and reproducibility deteriorate. These results are discussed within a microscopic model. Contrast values as high as 10 and good reproducibility have been obtained with a developer concentration of 25% tetramethyl ammonium hydroxide and a baking temperature of 90 °C. With these optimal parameters an experimental lithographic pattern of 50 nm lines and spaces could be resolved in 220 nm thick HSQ resist film exposed at 50 keV.read more
Citations
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Journal ArticleDOI
Nanofabrication by electron beam lithography and its applications
TL;DR: In this article, a review of electron beam lithography (EBL) based nanofabrication techniques for pattern transfer is presented, focusing on how to apply the property of EBL resists for constructing multilayer stacks towards pattern transfer.
Journal ArticleDOI
Thermal and Kerr nonlinear properties of plasma-deposited silicon nitride/ silicon dioxide waveguides.
TL;DR: Experimental evaluations of loss and nonlinear optical response in a waveguide and an optical resonator, both implemented with a silicon nitride/ silicon dioxide material platform prepared by plasma-enhanced chemical vapor deposition with dual frequency reactors that significantly reduce the stress and the consequent loss of the devices are introduced.
Journal ArticleDOI
Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art.
A E Grigorescu,Cornelis W. Hagen +1 more
TL;DR: An overview of the best resolution obtained with several types of both organic and inorganic resists, including hydrogen silsesquioxane (HSQ), which is a relatively new e-beam resist that is very suitable when aiming for sub-20-nm resolution.
Journal ArticleDOI
Ultrahigh-quality-factor silicon-on-insulator microring resonator
TL;DR: The development of ultrahigh-quality-factor (Q) silicon-on-insulator (SOI) microring resonators based on silicon wire waveguides is presented, illustrating that in addition to low propagation losses the critical coupling condition is essential for optimizing device characteristics.
Journal ArticleDOI
Fabrication of Photonic Wire and Crystal Circuits in Silicon-on-Insulator Using 193-nm Optical Lithography
Shankar Kumar Selvaraja,Patrick Jaenen,Wim Bogaerts,D. Van Thourhout,Pieter Dumon,Roeland Baets +5 more
TL;DR: In this paper, the authors demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits, and demonstrate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90deg bend of 5mum radius.
References
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Journal ArticleDOI
Proximity effect in electron-beam lithography
TL;DR: In this article, a simple technique for the computation of the proximity effect in electron-beam lithography is presented, which gives results of the exposure intensity received at any given point in a pattern area using a reciprocity principle.
Journal ArticleDOI
Three-dimensional siloxane resist for the formation of nanopatterns with minimum linewidth fluctuations
TL;DR: In this paper, the authors evaluate hydrogen silsesquioxane (HSQ) with a three-dimensional framework from the standpoints of resist patterning and its ability to reduce linewidth fluctuation.
Journal ArticleDOI
Properties of a ‐ SiO x : H Thin Films Deposited from Hydrogen Silsesquioxane Resins
TL;DR: In this article, a spin-on process with hydrogen silsesquioxane (HSQ) resin is used to deposit amorphous SiO:H dielectric films, and it has been observed that HSQ-based films also provide the added benefit of relative permittivity less than SiO 2, which helps to minimize electrical delay.
Journal ArticleDOI
Nano-patterning of a hydrogen silsesquioxane resist with reduced linewidth fluctuations
TL;DR: In this article, a new resist system providing small linewidth fluctuation has been developed for nanolithography Hydrogen silsesquioxane (HSQ) resist used here has a small polymer size because of its three-dimensional framework.
Journal ArticleDOI
Hydrogen silsesquioxane/novolak bilayer resist for high aspect ratio nanoscale electron-beam lithography
TL;DR: A bilayer resist system consisting of hydrogen silsesquioxane (HSQ) as negative tone electron (e)-beam resist top coat and hard baked novolak resist as bottom coat, has been investigated for its ability to yield high aspect ratio nanoscale structures as mentioned in this paper.
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