Journal ArticleDOI
Study of Defects Generated by Standard- and Plasma-Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
Laurent Ottaviani,Michel Kazan,Stephane Biondo,Filip Tuomisto,Frederic Milesi,Julian Duchaine,Frank Torregrosa,Olivier Palais +7 more
Reads0
Chats0
TLDR
In this paper, a comparison between two kinds of Nitrogen implantations for the formation of thin n+p junctions in p-type Silicon Carbide (SiC) epitaxial layers is made.Abstract:
A comparison is made between two kinds of Nitrogen implantations for the formation of thin n+p junctions in p-type Silicon Carbide (SiC) epitaxial layers. The standard beam ion implantations and PULSIONTM processes were performed at two distinct energies (700 eV and 7 keV) and the subsequent annealing was held at 1600°C in a resistive furnace specifically adapted to SiC material. Positron Annihilation Spectroscopy (PAS) and unpolarized infrared reflectivity (IR) measurements were carried out before and after the annealing, respecively. Despite the presence of deep vacancy clusters near the as-implanted sample surfaces, no extended defects were detected after the annealing. Plasma implanted samples prove to contain a lower point defect concentration than beam implanted samples. The concentration of these defects (resulting from plasma process) is higher in the plane parallel to the optical axis, which denotes an energy spreading alongside the dopant distribution.read more
Citations
More filters
Journal ArticleDOI
Dependence of surface plasmon-phonon-polariton in 4 H-SiC on free carrier concentration
H. Karakachian,Michel Kazan +1 more
TL;DR: In this paper, the Fourier transform of p-polarized reflectivity measurements were carried out on different 4'H-SiC epilayers differing in their free carrier concentration.
Patent
Method for producing a neutron detector and neutron detector
TL;DR: In this paper, a method for detecting a flux of neutrons the parameters of which are comprised in predetermined ranges, characterised in that it comprises at least: one phase of determining parameters, comprising the following steps: - simulating the penetration of incident neutrons, and identifying the depth of the defect peak (801) closest the interface between the first and second layers (100, 400) of the modelled stack.
References
More filters
Journal ArticleDOI
Coupled-Optical-Phonon-Mode Theory of the Infrared Dispersion in BaTi O 3 , SrTi O 3 , and KTa O 3
A. S. Barker,John J. Hopfield +1 more
Journal ArticleDOI
Thermal conductivity of silicon bulk and nanowires: Effects of isotopic composition, phonon confinement, and surface roughness
Michel Kazan,Grégory Guisbiers,Sérgio Pereira,Maria R. Correia,Pierre Masri,Aurélien Bruyant,Sebastian Volz,Pascal Royer +7 more
TL;DR: In this article, a rigorous analysis of the thermal conductivity of bulk silicon (Si) and Si nanowires (Si NWs) is presented, which takes into account the exact physical nature of the various acoustic and optical phonon mechanisms.
Journal ArticleDOI
Mobility and Infrared Absorption in n‐Type Gallium Arsenide
TL;DR: The relation between infrared absorption and mobility in gallium arsenide has been examined in this paper, and the Haga-Kimura theory was used to predict the free-carrier absorption coefficient α in the far infrared (50-500 μm) takes the simple classical form α ∝Nλ2/μ, where N is the carrier concentration, λ the wavelength, and μ the drift mobility.
Journal ArticleDOI
Crystal orientation by unpolarized infrared reflectivity application to aluminum nitride
TL;DR: In this paper, the Fourier transform infrared (FTIR) reflectivity was used as an approach to non-destructive optical technique for crystal orientation in self-nucleated wurtzite aluminum nitride (AlN).
Journal ArticleDOI
Vacancy defects in III-nitrides: what does positron annihilation spectroscopy reveal?
TL;DR: In this paper, the authors present a short review and comparison of the results obtained with positron annihilation spectroscopy studies of vacancy defects in AlN, GaN and InN. The combination of positron lifetime and Doppler broadening techniques with theoretical calculations has provided the means to deduce both the identities and the concentrations of the vacancies in these materials, while performing measurements as a function of temperature has given information on the charge states of the detected defects.