Journal ArticleDOI
Synthesis of buried silicon nitride layers by rapid thermal annealing
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TLDR
In this article, the influence of RTA temperature and time on the formation of buried layers of silicon nitride was studied by IR transmission and X-ray diffraction techniques, and the results were compared with those obtained by traditional furnace annealing.About:
This article is published in Thin Solid Films.The article was published on 1988-10-01. It has received 6 citations till now. The article focuses on the topics: Nitride & Nanocrystalline silicon.read more
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Electrical breakdown voltage characteristics of buried silicon nitride layers and their correlation to defects in the nitride layer
C.M.S. Rauthan,J.K. Srivastava +1 more
TL;DR: In this paper, an electrical breakdown strength of 3-4 MV/cm was found for buried layers of silicon nitride in silicon-on-insulator (SOI) structures, synthesized by post-implant annealing of high-dose nitrogen-implanted silicon.
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Improvement in buried silicon nitride silicon-on-insulator structures by fluorine-ion implantation
TL;DR: In this article, the authors demonstrate that fluorine ion implantation in the SOI structures modifies the distribution of nitrogen that results in better stoichiometry of the buried silicon nitride layers and abrupt Si3N4-Si interfaces.
Journal ArticleDOI
Infrared analysis of buried insulator layers formed by ion implantation into silicon
TL;DR: An experimental and theoretical procedure for the analysis of buried layers is proposed and discussed using experimental data from buried layers in Si formed by oxygen and nitrogen ion implantation in this paper, which has allowed the structural analysis of the buried layer in Si to be made.
Journal ArticleDOI
Structural characterization of buried nitride layers formed by nitrogen ion implantation in silicon
TL;DR: In this paper, the structures of ion-beam synthesized buried silicon nitride layers were studied by X-ray diffraction (XRD) technique, which revealed the formation of hexagonal silicon 3N4 structure at all fluences.
Journal ArticleDOI
Effect of fluorine‐ion implantation on buried nitride silicon‐on‐insulator structures
TL;DR: In this paper, the effect of fluorine ion (19F+) implantation on the buried silicon nitride silicon-on-insulator (SOI) structures was investigated.
References
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Epitaxial silicon layers grown on ion‐implanted silicon nitride layers
TL;DR: In this article, the authors describe a set of silicon nitride layers formed by ion implantation while retaining a relatively undamaged silicon surface region, which exhibits significantly lower defect concentrations than do silicon layers on spinel, as determined by optical microscopy and by proton channeling measurements.
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High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogen
P.L.F. Hemment,R.F. Peart,M.F. Yao,K.G. Stephens,Richard J. Chater,John A. Kilner,D. Meekison,G.R. Booker,R.P. Arrowsmith +8 more
TL;DR: In this article, a Si3N4 interfaces are extremely abrupt but with an irregularity of ∼100 and ∼50 A at the upper and lower interfaces, respectively, and the surface layer is high quality single crystal silicon (χmin = 0.043) containing no polycrystalline material nor precipitates.
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Study of buried silicon nitride layers synthesized by ion implantation
TL;DR: In this article, the formation of buried layers of silicon nitride by nitrogen-ion implantation in single-crystal silicon is studied, and the conditions of implantation (energy, substrate temperature, beam intensity) play a fundamental role in the structure of the superficial silicon layer: the substrate must not be amorphized up to...
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CMOS on buried nitride—A VLSI SOI technology
Günter Zimmer,Holger Vogt +1 more
TL;DR: In this paper, a silicon on insulator (SOI) for VLSI applications is presented, where the insulator is a buried silicon nitride formed by nitrogen implantation and annealing.