Journal ArticleDOI
Temperature‐dependent current‐voltage and lightsoaking measurements on Cu(In,Ga)Se2 solar cells with ALD‐Zn1‐xMgxO buffer layers
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In this paper, lightsoaking and temperature-dependent currentvoltage measurements on Cu(In,Ga)Se2 solar cells with atomic layer deposited Zn1-xMgxO buffer layers are presented.Abstract:
In this paper, lightsoaking and temperature-dependent current-voltage (JVT) measurements on Cu(In,Ga)Se2 solar cells with atomic layer deposited Zn1-xMgxO buffer layers are presented. A range of Mg ...read more
Citations
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Journal ArticleDOI
Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing
TL;DR: Atomic layer deposition (ALD) is a vapour-phase deposition technique capable of depositing high quality, uniform and conformal thin films at relatively low temperatures, which can be employed to face processing challenges for various types of next-generation solar cells; hence, ALD has attracted great interest in academic and industrial research in recent years as discussed by the authors.
Journal ArticleDOI
Nanoengineering and interfacial engineering of photovoltaics by atomic layer deposition
TL;DR: This review focuses on the burgeoning field of atomic layer deposition (ALD) for photovoltaics, a self-limiting thin film deposition technique that has demonstrated usefulness in virtually every sector of PV technology including silicon, thin film, tandem, organic, dye-sensitized, and next generation solar cells.
Proceedings ArticleDOI
Light soaking effects on photovoltaic modules: Overview and literature review
Michael Gostein,Lawrence R. Dunn +1 more
TL;DR: In this paper, the authors present an overview of PV light soaking behavior based on a literature review of light soaking effects on commercial PV module technologies, including a-Si/μc-Si, CdTe, CIS/CIGS, and c-Si.
Journal ArticleDOI
Record 1.0 V open‐circuit voltage in wide band gap chalcopyrite solar cells
Fredrik Larsson,Nina Shariati Nilsson,Jan Keller,Christopher Frisk,V. Kosyak,Marika Edoff,Tobias Törndahl +6 more
TL;DR: In this article, the conduction band level can be adapted to an almost perfect fit to the wide band gap Cu(In,Ga)Se2 and CuGaSe2 materials by using Zn1−xSnxOy as a buffer layer.
Journal ArticleDOI
Baseline model of graded-absorber Cu(In,Ga)Se2 solar cells applied to cells with Zn1 − xMgxO buffer layers
TL;DR: In this article, a baseline parameter set for electrical modeling of Cu(In,Ga)Se2 solar cells with compositionally graded absorber and CdS buffer layer is established.
References
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Journal ArticleDOI
MgxZn1−xO as a II–VI widegap semiconductor alloy
Akira Ohtomo,Megumi Kawasaki,Takashi Koida,K. Masubuchi,Hideomi Koinuma,Y. Sakurai,Yasuhiko Yoshida,Tadashi Yasuda,Yusaburo Segawa +8 more
TL;DR: In this article, a wide gap II-VI semiconductor alloy, MgxZn1−xO, was proposed for the fabrication of heteroepitaxial ultraviolet light emitting devices based on ZnO.
Journal ArticleDOI
Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
Stephan Lany,Alex Zunger +1 more
TL;DR: In this article, the anion vacancies in II-VI and chalcopyrite semiconductors were identified as a class of intrinsic defects that can exhibit metastable behavior.
Journal ArticleDOI
Preparation of Zn1−xMgxO films by radio frequency magnetron sputtering
TL;DR: In this article, the authors conducted a systematic investigation of solid solution thin films of Zn 1− x Mg x O, a group of ternary compounds of the Zn-Mg-O system.
Journal ArticleDOI
Light- and bias-induced metastabilities in Cu(In,Ga)Se2 based solar cells caused by the (VSe-VCu) vacancy complex
Stephan Lany,Alex Zunger +1 more
TL;DR: In this paper, the authors investigate theoretically light and bias-induced metastabilities in CIGS-based solar cells, suggesting the Se-Cu divacancy complex (VSe-VCu) as the source of this hitherto puzzling phenomena.
Journal ArticleDOI
Blue-photon modification of nonstandard diode barrier in CuInSe2 solar cells
TL;DR: In this article, a model that is based on a low free-electron concentration and a high concentration of deep levels in the CdS window layer is presented. But this model is not consistent with observed variations in current-voltage, capacitance, and laser scan data with illumination wavelength and history.
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Light- and bias-induced metastabilities in Cu(In,Ga)Se2 based solar cells caused by the (VSe-VCu) vacancy complex
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