Journal ArticleDOI
The effect of emitter doping gradient on f T in microwave bipolar transistors
J.A. Kerr,F. Berz +1 more
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In this article, the effect of the emitter doping gradient on the transit time in microwave bipolar transistor structures has been investigated, and it was shown that there is appreciable free carrier storage in the space charge layer.Abstract:
The effect of the emitter doping gradient on the transit time in microwave bipolar transistor structures has been investigated. The range of gradients was chosen to cover those typically found in shallow phosphorus- and arsenic-emitter diffusions. The results show that there is appreciable free carrier storage in the emitter space charge layer. The Storage decreases when the doping gradient in the junction is increased. This effect can account for the improved f T values of arsenic emitter transistors. The free carrier storage in the emitter space charge layer is compared with predictions deduced from the theoretical analysis of Morgan and Smits [1].read more
Citations
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SiGe Heterojunction Bipolar Transistors
TL;DR: In this paper, the physics, materials science and technology of silicon bipolar transistors and SiGe BiCMOS transistors are described in a unified manner, and a unified view of the new developments in bipolar technology is presented.
Journal ArticleDOI
A simple regional analysis of transit times in bipolar transistors
TL;DR: In this paper, the authors propose a quasi-static approach to calculate the cutoff frequency or unity gain bandwidth of a one-dimensional bipolar transistor by means of a numerical device simulation program, where the total transit time from emitter contact to collector contact is subdivided into five physically meaningful components.
Proceedings ArticleDOI
Electrostatic discharge characterization of epitaxial-base silicon-germanium heterojunction bipolar transistors
Steven H. Voldman,P. Juliano,J. Schmidt,R. Johnson,Louis D. Lanzerotti,Alvin J. Joseph,Ciaran J. Brennan,J. Dunn,David L. Harame,Elyse Rosenbaum,Bernard S. Meyerson +10 more
TL;DR: In this article, the authors investigated high-current and electrostatic discharge (ESD) phenomena in pseudomorphic epitaxial-base silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in base-collector, base-emitter, collector-to-substrate configurations.
Journal ArticleDOI
An analytical and experimental investigation of the cutoff frequency f/sub T/ of high-speed bipolar transistors
TL;DR: In this paper, the effects of vertical and lateral structures on cutoff frequency and breakdown voltage for high-speed bipolar transistors were investigated in the range from 2.5 to 80 GHz by analysis and from 3 to 20 GHz by experiment.
Proceedings Article
Silicon Germanium heterojunction bipolar transistor ESD power clamps and the Johnson Limit
TL;DR: In this paper, a SiGe-based ESD power clamp was constructed using epitaxial base pseudomorphic Silicon Germanium heterojunction transistors in a common collector Darlington configuration.
References
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Journal ArticleDOI
A self-consistent iterative scheme for one-dimensional steady state transistor calculations
TL;DR: In this paper, a self-consistent iterative scheme for the numerical calculation of dc potentials and currents in a one-dimensional transistor model is presented, where boundary conditions are applied only at points representing contacts.
Journal ArticleDOI
Transport equations in heavy doped silicon
TL;DR: In this article, the general transport equations in a heavy doped semiconductor are given, taking the position-dependent band structure into account, and an intrinsic concentration depending on the doping levels is introduced.
Journal ArticleDOI
A charge control relation for bipolar transistors
TL;DR: A relation is given which links emitter and collector junction voltages, V eb and V eb , collector current I c , and the total charge Q b of carriers that enter through the base terminal (electrons in a pnp transistor).
Journal ArticleDOI
Transport equations in heavily doped silicon, and the current gain of a bipolar transistor
M.S. Mock,M.S. Mock +1 more
TL;DR: In this paper, the Fermi level and effective density of states were calculated for heavily doped silicon, using methods similar to those of Kleppinger and Lindholm and Van Overstraeten et al.
Journal ArticleDOI
Potential distribution and capacitance of a graded p-n junction
S. P. Morgan,F. M. Smits +1 more
TL;DR: In this paper, the voltage dependence of the stored charge (low-frequency ac capacitance) of a graded p-n junction numerically, as a function of the bias voltage across the junction, is calculated.