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The meyer-neldel rule in semiconductors

R Ruud Metselaar, +1 more
- 01 Dec 1984 - 
- Vol. 55, Iss: 3, pp 320-326
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TLDR
In this paper, two explanations for the Meyer-Neldel rule in inorganic semiconductors are given: the freezing-in of donor acceptor type defects can lead to this rule both for band conductors and for small-polaron hopping conductors.
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This article is published in Journal of Solid State Chemistry.The article was published on 1984-12-01 and is currently open access. It has received 61 citations till now.

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Citations
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Present status of amorphous In–Ga–Zn–O thin-film transistors

Toshio Kamiya, +2 more
- 10 Sep 2010 - 
TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.
Journal ArticleDOI

A phenomenological model for the Meyer-Neldel rule

Jeppe C. Dyre
- 10 Oct 1986 - 
TL;DR: In this article, it is shown that there exists only one possible phenomenological model, which is based on an exponential probability distribution of energy barriers, which predicts a power-law frequency dependence of the AC conductivity with the exponent s given by s = 1-T/T0 where T 0 is the characteristic temperature of the Meyer-Neldel rule.
Journal ArticleDOI

Substitutional disorder: structure and ion dynamics of the argyrodites Li6PS5Cl, Li6PS5Br and Li6PS5I.

Isabel Hanghofer, +8 more
- 17 Apr 2019 - 
TL;DR: In this article, the authors used broadband impedance spectroscopy and 7Li NMR relaxation measurements and showed that very fast local Li ion exchange processes are taking place in all three compounds and that the diffusion-induced NMR spin-lattice relaxation in Li6PS5I is almost identical to that of its relatives.

Impurity Conduction at Low Concentrations.

Allen H. Miller
TL;DR: In this article, the conductivity of an n-type semiconductor has been calculated in the region of low-temperature $T$ and low impurity concentration ${n}_{D}$.
Journal ArticleDOI

Li10GeP2S12-Type Superionic Conductors: Synthesis, Structure, and Ionic Transportation

Yuki Kato, +2 more
- 01 Nov 2020 - 
References
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Journal ArticleDOI

Reversible conductivity changes in discharge‐produced amorphous Si

D. L. Staebler, +1 more
- 15 Aug 1977 - 
TL;DR: In this paper, a new reversible photoelectronic effect was reported for amorphous Si produced by glow discharge of SiH4, where long exposure to light decreases both the photoconductivity and the dark conductivity.
Journal ArticleDOI

Impurity Conduction at Low Concentrations

A. J. Miller, +1 more
- 01 Nov 1960 - 
TL;DR: In this paper, the conductivity of an n-type semiconductor has been calculated in the region of low-temperature $T$ and low impurity concentration ${n}_{D}$.
Journal ArticleDOI

Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon

D.L. Staebler, +1 more
- 01 Jun 1980 - 
TL;DR: In this article, the authors show that long exposure to light decreases the photoconductivity and dark conductivity of some samples of hydrogenated amorphous silicon (a•Si':'H). Annealing above ∼150°C reverses the process.
Journal ArticleDOI

Small-polaron versus band conduction in some transition-metal oxides

A. J. Bosman, +1 more
- 01 Jan 1970 - 
TL;DR: In this article, an attempt is made to establish the nature of free charge carriers and of charge carriers bound to centres in p-type NiO, CoO, and MnO and in n-type MnO, α-Fe2O3.
Journal ArticleDOI

Pre‐exponential Factor in Semiconducting Organic Substances

Barnett Rosenberg, +3 more
- 01 Nov 1968 - 
TL;DR: In this article, a three-constant equation of the following form applies: σ(T) = ωσ0′ exp(E/ε/ε) exp(−E/δ/ε), where T 0 is a new constant, the "characteristic temperature" of the substance.
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Frequently Asked Questions (10)
Q1. What are the contributions in "The meyer-neldel rule in semiconductors" ?

In this paper, it was shown that the freezing-in of donor acceptor-type defects can lead to this rule both for band conductors and for small-polaron hopping conductors. 

It is shown that a theory based on freezing-in of defects, first given by Busch, can be extended to small-polaron hopping conductors. 

Next it is shown that a Gaussian distribution of defect energy levels or a Gaussian distribution of hopping energies, under specific conditions of defect interactions, can also lead to this rule. 

In a following publication these authors (23) show that also small-polaron band conduction can lead to Eq. (4), in which case 2T0 equals the Debye temperature TD. 

Wapenaar et al. (26) were able to explain the Meyer-Neldel rule in Ba1-,LaXF2+x solid solutions assuming a Gaussian distribution of activation energies where the average value depends linearly on the lanthanum concentration x. 

A second mechanism discussed by Roberts is possible if the concentration of the majority carrier band states tail exponentially with energy. 

Straight lines demonstrate the Meyer-Neldel rule.suggestion by Busch (5) that the factor (Y in Eq. (3) is a measure of the temperature 8 where the defect concentration is frozen-in. 

the derivation given by Busch is not directly applicable in their case since Busch assumes that conduction takes place in a broad band, while charge transport in vanadium garnets takes place via adiabatic hopping of small polarons (27). 

Both for inorganic and organic semiconductors the Meyer-Neldel rule is observed in samples in which differences in concentration of charge carriers have been created by some chemical treatment. 

First it is shown that the freezing-in of donor acceptor-type defects can lead to this rule both for band conductors and for small-polaron hopping conductors.