Journal ArticleDOI
The origin of the hole injection improvements at indium tin oxide/ molybdenum trioxide/N,N' -bis(1-naphthyl)-N,N' -diphenyl-1,1' '-biphenyl-4,4'-diamine interfaces
Hyunbok Lee,Sang Wan Cho,Kyul Han,Pyung Eun Jeon,Chung Nam Whang,Kwangho Jeong,Kwanghee Cho,Yeonjin Yi +7 more
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In this paper, the authors investigated the interfacial electronic structures of indium tin oxide (ITO)/molybdenum trioxide (MoO3)/N,N′-bis(1-naphthyl)-N, N′-diphenyl-1, 1′-biphenylon-4, 4′-dimine (NPB) using in situ ultraviolet and x-ray photoemission spectroscopy to understand the origin of hole injection improvements in organic light-emitting devices (OLEDs).Abstract:
We investigated the interfacial electronic structures of indium tin oxide (ITO)/molybdenum trioxide (MoO3)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) using in situ ultraviolet and x-ray photoemission spectroscopy to understand the origin of hole injection improvements in organic light-emitting devices (OLEDs). Inserting a MoO3 layer between ITO and NPB, the hole injection barrier was remarkably reduced. Moreover, a gap state in the band gap of NPB was found which assisted the Ohmic hole injection at the interface. The hole injection barrier lowering and Ohmic injection explain why the OLED in combination with MoO3 showed improved performance.read more
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Journal ArticleDOI
Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications
TL;DR: An overview of TMO-based device architectures ranging from transparent OLEDs to tandem OPV cells is given, and various TMO film deposition methods are reviewed, addressing vacuum evaporation and recent approaches for solution-based processing.
Journal ArticleDOI
Universal energy-level alignment of molecules on metal oxides
Mark T. Greiner,Michael G. Helander,Wing Man Tang,Zhibin Wang,Jacky Qiu,Zheng-Hong Lu,Zheng-Hong Lu +6 more
TL;DR: A universal energy-alignment trend is observed for a set of transition-metal oxides--representing a broad diversity in electronic properties--with several organic semiconductors, demonstrating that, despite the variance in their electronic properties, oxide energy alignment is governed by one driving force: electron-chemical-potential equilibration.
Journal ArticleDOI
Transition Metal Oxide Work Functions: The Influence of Cation Oxidation State and Oxygen Vacancies
TL;DR: In this paper, a correlation between the oxide work function and cation oxidation state was demonstrated, and a model was presented that relates the work function to the oxygen deficiency for d0 oxides in the limit of dilute oxygen vacancies.
Journal ArticleDOI
Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films
TL;DR: In this paper, the electron affinity and ionization energy of vacuum-deposited molybdenum trioxide (MoO3) and of a typical MoO3/hole transport material (HTM) interface were determined via ultraviolet and inverse photoelectron spectroscopy.
Journal ArticleDOI
Energetics of metal–organic interfaces: New experiments and assessment of the field
TL;DR: In this article, a review of polymer and small molecule-on-metal interfaces with metal is presented, with emphasis placed specifically on the electronic structure and molecular level alignment at these interfaces, perceived differences between small molecule and polymer interfaces, and the difference between organic-onmetal and metal-onorganic interfaces.
References
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Journal ArticleDOI
Organic Electroluminescent Diodes
Ching Wan Tang,Steven A Vanslyke +1 more
TL;DR: In this article, a double-layer structure of organic thin films was prepared by vapor deposition, and efficient injection of holes and electrons was provided from an indium-tinoxide anode and an alloyed Mg:Ag cathode.
Journal ArticleDOI
Organic electroluminescent devices with improved stability
TL;DR: In this article, a stable organic electroluminescent devices based on vapor-deposited Alq thin films have been achieved, which are derived from several factors including: (1) a multilayer thin-film structure with a CuPc stabilized hole-injection contact, (2) a hole-transport diamine layer using a naphthyl substituted benzidine derivative, and (3) an ac drive wave form.
Journal ArticleDOI
Metal oxides as a hole-injecting layer for an organic electroluminescent device
TL;DR: In this article, a hole-injecting layer for an organic electroluminescent (EL) device consisting of N,N'-diphenyl-N,N-bis(3-methylphenyl1)1,1'-biphensyl-4,4' diamine (TPD) and tris-(8-quinolinolato) aluminium (Alq) was presented.
Journal ArticleDOI
Improved performances of organic light-emitting diodes with metal oxide as anode buffer
TL;DR: In this article, a green organic light-emitting diodes (OLEDs) based on molybdenum oxide (MoO3) as a buffer layer on indium tin oxide (ITO) was demonstrated.
Journal ArticleDOI
Formation of Ohmic hole injection by inserting an ultrathin layer of molybdenum trioxide between indium tin oxide and organic hole-transporting layers
TL;DR: In this article, hole-only devices using indium tin oxide (ITO) anode and N,N′-diphenyl-N,N´-bis(1-naphthyl)-1,1′-biphensyl-4,4′-Diamine (α-NPD) layers were measured with various thicknesses of a molybdenum trioxide (MoO3) buffer layer inserted between ITO and α-nPD.