Journal ArticleDOI
The shifted-rectangle approximation for simplifying the analysis of ion-implanted MOSFETs and MESFETs
Shreepad Karmalkar,K.N. Bhat +1 more
Reads0
Chats0
TLDR
In this article, a shifted-rectangle approximation (SRA) was proposed to obtain a quadratic function of the gate controlled depletion charge for the V d -Q d characteristics of implanted FETs.Abstract:
The ability to express the depletion layer voltage drop V d in terms of a quadratic function of the gate controlled depletion charge Q d is shown to be a key to the success of analytical modelling of ion-implanted MOSFETs and MESFETs. It is shown that such a quadratic function for the V d - Q d characteristics of implanted FETs can be obtained by approximating the implanted doping profile by a “shifted-rectangle” profile whose parameters can be derived directly from implantation parameters. It is also shown that the shifted-rectangle approximation (SRA) is not just an artifice for simplicity but accurately conserves the actual Q d , V d and depletion width conditions of both shallow and deep implanted Gaussian shaped doping profiles. The SRA simplifies the analysis of multiple-implanted devices and can be considered to be a basic approximation to be used along with the depletion and gradual channel approximations for a simple and accurate analysis of the non-uniformly doped FETs.read more
Citations
More filters
Journal ArticleDOI
A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling
TL;DR: In this paper, a conformal mapping technique is used to analytically solve the two-dimensional Poisson equation, whereby inhomogeneous substrate doping is taken into account, for the geometry and voltage dependence of threshold voltage and for the subthreshold behavior of short-channel MOSFETs.
Journal ArticleDOI
PREDICTMOS – a predictive compact model of small-geometry MOSFETs for circuit simulation and device scaling calculations
Alexander Klös,A. Kostka +1 more
TL;DR: PREDICTMOS-a predictive compact model for structure oriented simulation of MOS devices is presented which has been developed by use of strongly physics-based model equations for threshold voltage, surface potential in weak inversion, and currents in strong inversion including the saturation regime.
Journal ArticleDOI
A new equivalent MOSFET representation of a HEMT to analytically model nonlinear charge control for simulation of HEMT devices and circuits
TL;DR: In this article, it was shown that the behavior of the charge and position of the 2-DEG as a function of gate-source and drain-source voltages can be regarded as a simple buried-channel (BC) MOSFET.
Book ChapterDOI
A fully 2D, Analytical Model for the Geometry and Voltage Dependence of Threshold Voltage in Submicron MOSFET’s
TL;DR: In this paper, a physics-based, compact model for the threshold voltage shift in short-channel MOSFETs is presented, which is based upon a new theoretical approach in MOS modeling.
Development and operation of buried channel charge coupled devices in 6h silicon carbide
TL;DR: In this article, the feasibility for developing imagers in Sic through the fabrication and demonstration of a buried channel CCD linear shift array was investigated, and the MOS field effect family was studied.
References
More filters
Journal ArticleDOI
Short-channel MOST threshold voltage model
TL;DR: A new short-channel threshold voltage model based on an analytic solution of the two-dimensional Poisson equation in the depletion region under the gate of an MOS transistor (MOSTs) is presented, and closed-form expressions for the threshold voltage and subthreshold drain current are well suited for circuit simulation and for determining performance limits of MOSTs.
Journal ArticleDOI
A device model for an ion-implanted MESFET
TL;DR: In this paper, a model is developed for an ion-implanted MESFET device in terms of the range and straggle parameters of the Gaussian profile and reasonable approximations are introduced to obtain a closed-form solution for the linear and triode regions of operation.
Journal ArticleDOI
Analytical models of ion-implanted GaAs FET's
Tzu-Hung Chen,M.S. Shur +1 more
TL;DR: In this article, analytical models for the calculation of the currentvoltage characteristics of ion-implanted GaAs FET's are presented. But the results of the calculation are in good agreement with experimental data.
Journal ArticleDOI
Analysis and characterization of the depletion-mode IGFET
TL;DR: Using simple charge-voltage relationships, a four-terminal model is developed for the depletion-mode IGFET, where device threshold voltage, drain saturation voltage, and conditions for surface inversion are explicitly given as a function of these parameters.
Journal ArticleDOI
Semi-empirical model for the threshold voltage of a double implanted MOSFET and its temperature dependence
TL;DR: In this paper, a semi-empirical model for the threshold voltage of a small geometry double implanted enhancement type MOSFET, especially useful in a circuit simulation program like SPICE, has been developed.