Journal ArticleDOI
Thermodynamic considerations in refractory metal-silicon-oxygen systems
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TLDR
In this paper, ternary phase diagrams were used to explain the reactivity of a metal with silicon dioxide, the effectiveness of native oxide in preventing metal-silicon interdiffusion, and the formation of silicon dioxide in preference to metal oxides during silicide oxidation.Abstract:
Thermodynamic considerations in thin‐film reactions involving refractory metals, refractory metal silicides, silicon, and silicon dioxide are described using ternary phase diagrams. Calculated metal‐silicon‐oxygen phase diagrams for Mo, W, Ta, and Ti are used to explain the reactivity of the metal with silicon dioxide, the effectiveness of native oxide in preventing metal‐silicon interdiffusion, and the formation of silicon dioxide in preference to metal oxides during silicide oxidation. Distinctions are drawn between experimental results which can be explained solely on thermodynamic grounds and those requiring consideration of both thermodynamic and kinetic factors.read more
Citations
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Thermodynamic stability of binary oxides in contact With silicon
K. J. Hubbard,Darrell G. Schlom +1 more
TL;DR: In this paper, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted, including those involving ternary phases.
Journal ArticleDOI
Hafnium and zirconium silicates for advanced gate dielectrics
TL;DR: In this article, a gate dielectric film with metal contents ranging from ∼3 to 30 at. % Hf and Zr has been investigated, and the results show that Hf exhibits excellent electrical properties and high thermal stability in direct contact with Si, while Al electrodes produce very good electrical properties, but also react with the silicates.
Journal ArticleDOI
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
Glen D. Wilk,Robert M. Wallace +1 more
TL;DR: Hafnium silicate (HfSixOy) gate dielectric films with ∼6 at. % Hf exhibit significantly improved leakage properties over SiO2 in the ultrathin regime while remaining thermally stable in direct contact with Si.
Journal ArticleDOI
Silicides and ohmic contacts
Jeffrey P. Gambino,E.G. Colgan +1 more
TL;DR: An overview of the scientific and technological aspects of silicides and ohmic contacts, including the electrical properties of metal-Si contacts, metal and silicide deposition techniques, metal reactions, silicide patterning processes, and device degradation due to silicides, is given in this article.
References
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Book
Thermochemical properties of inorganic substances
Ihsan Barin,Ottmar Knacke +1 more
TL;DR: In this paper, a volume of tables conveying the thermochemical parameters of more than 2000 substances, cover enthalpy, entropy, chemical potential and Planck's function, and commentaries on the chemical reactions of the relevant component and indications of stability/metastability.
Journal ArticleDOI
Refractory silicides for integrated circuits
TL;DR: In this paper, various properties and the formation techniques of transition metal silicides have been reviewed and relations between the various properties of the metal or silicide electronic or crystallographic structure have been made to predict the more useful silicides for SIC applications.
Journal ArticleDOI
Reaction of thin metal films with SiO2 substrates
TL;DR: In this article, a table of the standard heats of formation for metal silicides has been compiled, which can also be correlated with the mean electronegativity of the metal, which offers a convenient empirical method to predict whether a metal will react with SiO 2.
Journal ArticleDOI
Passivity and inhibition during the oxidation of metals at elevated temperatures
TL;DR: Typical phenomena of passivity and inhibition during the oxidation of metals and alloys at elevated temperatures are considered in order to stimulate the development of appropriate methods for minimizing corrosion at elevated temperature.
Journal ArticleDOI
Oxidation mechanisms in WSi2 thin films
TL;DR: In this paper, it was shown that removal of Si from the silicide (to form SiO2) apparently leads to the formation of free W, rather than the anticipated tungsten-rich W3Si3.