Journal ArticleDOI
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
Glen D. Wilk,Robert M. Wallace +1 more
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Hafnium silicate (HfSixOy) gate dielectric films with ∼6 at. % Hf exhibit significantly improved leakage properties over SiO2 in the ultrathin regime while remaining thermally stable in direct contact with Si.Abstract:
Hafnium silicate (HfSixOy) gate dielectric films with ∼6 at. % Hf exhibit significantly improved leakage properties over SiO2 in the ultrathin regime while remaining thermally stable in direct contact with Si. Capacitance–voltage measurements show an equivalent oxide thickness (tox) of less than 18 A for a 50 A HfSixOy film deposited directly on a Si substrate, with no significant dispersion of the capacitance for frequencies ranging from 10 kHz to 1 MHz. Current–voltage measurements show for the same film a leakage current of 1.2×10−6 A/cm2 at 1 V bias. Hysteresis in these films is measured to be less than 20 mV, the breakdown field is measured to be EBD∼10 MV/cm, and the midgap interface state density is Dit∼1011 cm−2 eV−1. Cross-sectional transmission electron microscopy shows no signs of reaction or crystallization in HfSixOy films on Si after being annealed at 800 °C for 30 min.read more
Citations
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
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Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
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High dielectric constant gate oxides for metal oxide Si transistors
TL;DR: In this article, a review of the development of high-k gate oxides such as hafnium oxide (HFO) and high-K oxides is presented, with the focus on the work function control in metal gate electrodes.
Journal ArticleDOI
Alternative dielectrics to silicon dioxide for memory and logic devices
TL;DR: Development of higher permittivity dielectrics for dynamic random-access memories serves to illustrate the magnitude of the now urgent problem of identifying alternatives to silicon dioxide for the gate dielectric in logic devices, such as the ubiquitous field-effect transistor.
Journal ArticleDOI
Hafnium and zirconium silicates for advanced gate dielectrics
TL;DR: In this article, a gate dielectric film with metal contents ranging from ∼3 to 30 at. % Hf and Zr has been investigated, and the results show that Hf exhibits excellent electrical properties and high thermal stability in direct contact with Si, while Al electrodes produce very good electrical properties, but also react with the silicates.
References
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K. J. Hubbard,Darrell G. Schlom +1 more
TL;DR: In this paper, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted, including those involving ternary phases.
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Crystalline Oxides on Silicon: The First Five Monolayers
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