Journal ArticleDOI
Hafnium and zirconium silicates for advanced gate dielectrics
TLDR
In this article, a gate dielectric film with metal contents ranging from ∼3 to 30 at. % Hf and Zr has been investigated, and the results show that Hf exhibits excellent electrical properties and high thermal stability in direct contact with Si, while Al electrodes produce very good electrical properties, but also react with the silicates.Abstract:
Hafnium and zirconium silicate (HfSixOy and ZrSixOy, respectively) gate dielectric films with metal contents ranging from ∼3 to 30 at. % Hf, or 2 to 27 at. % Zr (±1 at. % for Hf and Zr, respectively, within a given film), have been investigated, and films with ∼2–8 at. % Hf or Zr exhibit excellent electrical properties and high thermal stability in direct contact with Si. Capacitance–voltage measurements show an equivalent oxide thickness tox of about 18 A (21 A) for a 50 A HfSixOy (50 A ZrSixOy) film deposited directly on a Si substrate. Current–voltage measurements show for the same films a leakage current of less than 2×10−6 A/cm2 at 1.0 V bias. Hysteresis in these films is measured to be less than 10 mV, the breakdown field is measured to be EBD∼10 MV/cm, and the midgap interface state density is estimated to be Dit∼1–5×1011 cm−2 eV−1. Au electrodes produce excellent electrical properties, while Al electrodes produce very good electrical results, but also react with the silicates, creating a lower e l...read more
Citations
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High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems
Andrea C. Ferrari,Francesco Bonaccorso,Francesco Bonaccorso,Vladimir I. Fal'ko,Konstantin S. Novoselov,Stephan Roche,Peter Bøggild,Stefano Borini,Frank H. L. Koppens,Vincenzo Palermo,Nicola M. Pugno,Nicola M. Pugno,Nicola M. Pugno,Jose A. Garrido,Roman Sordan,Alberto Bianco,Laura Ballerini,Maurizio Prato,Elefterios Lidorikis,Jani Kivioja,Claudio Marinelli,Tapani Ryhänen,Alberto F. Morpurgo,Jonathan N. Coleman,Valeria Nicolosi,Luigi Colombo,Albert Fert,Albert Fert,Mar García-Hernández,Adrian Bachtold,Grégory F. Schneider,Francisco Guinea,Cees Dekker,Matteo Barbone,Zhipei Sun,Costas Galiotis,Alexander N. Grigorenko,Gerasimos Konstantatos,Andras Kis,Mikhail I. Katsnelson,Lieven M. K. Vandersypen,A. Loiseau,Vittorio Morandi,Daniel Neumaier,Emanuele Treossi,Vittorio Pellegrini,Vittorio Pellegrini,Marco Polini,Alessandro Tredicucci,Gareth M. Williams,Byung Hee Hong,Jong Hyun Ahn,Jong Min Kim,Herbert Zirath,Bart J. van Wees,Herre S. J. van der Zant,Luigi Occhipinti,Andrea di Matteo,Ian A. Kinloch,Thomas Seyller,Etienne Quesnel,Xinliang Feng,K.B.K. Teo,Nalin Rupesinghe,Pertti Hakonen,Simon R. T. Neil,Quentin Tannock,Tomas Löfwander,Jari M. Kinaret +68 more
TL;DR: An overview of the key aspects of graphene and related materials, ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries are provided.
Journal ArticleDOI
Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
Journal ArticleDOI
High dielectric constant gate oxides for metal oxide Si transistors
TL;DR: In this article, a review of the development of high-k gate oxides such as hafnium oxide (HFO) and high-K oxides is presented, with the focus on the work function control in metal gate electrodes.
Journal ArticleDOI
High dielectric constant oxides
TL;DR: In this article, the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects are discussed.
References
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