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Thick stress-free amorphous-tetrahedral carbon films with hardness near that of diamond

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TLDR
In this article, a process for making thick, stress-free, amorphous-tetrahedrally bonded carbon (a-tC) films with hardness and stiffness near that of diamond was developed.
Abstract
We have developed a process for making thick, stress-free, amorphous-tetrahedrally bonded carbon (a-tC) films with hardness and stiffness near that of diamond. Using pulsed-laser deposition, thin a-tC films (0.1–0.2 μm) were deposited at room temperature. The intrinsic stress in these films (6–8 GPa) was relieved by a short (2 min) anneal at 600 °C. Raman and electron energy-loss spectra from single-layer annealed specimens show only subtle changes from as-grown films. Subsequent deposition and annealing steps were used to build up thick layers. Films up to 1.2 μm thick have been grown that are adherent to the substrate and have low residual compressive stress (<0.2 GPa). The values of hardness and modulus determined directly from an Oliver–Pharr analysis of nanoindentation experimental data were 80.2 and 552 GPa, respectively. We used finite-element modeling of the experimental nanoindentation curves to separate the “intrinsic” film response from the measured substrate/film response. We found a hardness ...

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Citations
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Journal ArticleDOI

Diamond-like amorphous carbon

TL;DR: In this paper, the authors describe the deposition methods, deposition mechanisms, characterisation methods, electronic structure, gap states, defects, doping, luminescence, field emission, mechanical properties and some applications of diamond-like carbon.
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Diamond-like carbon — present status

TL;DR: A detailed assessment of the current status of diamond-like carbon (DLC) film deposition is given in this article, where the authors discuss deposition systems, characterization methods, film properties and possible applications.
Journal ArticleDOI

Stress reduction and bond stability during thermal annealing of tetrahedral amorphous carbon

TL;DR: In this paper, a comprehensive study of the stress release and structural changes caused by postdeposition thermal annealing of tetrahedral amorphous carbon (ta-C) on Si has been carried out.
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Ultrananocrystalline diamond thin films for MEMS and moving mechanical assembly devices

TL;DR: A major problem with the Si-based MEMS technology is that Si has poor mechanical and tribological properties as discussed by the authors, which makes it unsuitable for MEMS devices, and therefore it is not suitable for them.
Journal ArticleDOI

Evolution of sp2 bonding with deposition temperature in tetrahedral amorphous carbon studied by Raman spectroscopy

TL;DR: In this paper, two transitions in the bonding are found in tetrahedral amorphous carbon (ta-C) films as a function of deposition temperature, and the sp2 sites show a gradual ordering into the graphitic clusters through the sharp bonding transition.
References
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Journal ArticleDOI

An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments

TL;DR: In this paper, the authors used a Berkovich indenter to determine hardness and elastic modulus from indentation load-displacement data, and showed that the curve of the curve is not linear, even in the initial stages of the unloading process.
Book

The Properties of natural and synthetic diamond

J. E. Field
TL;DR: In this article, the authors present a survey of the state of the art in Solid State, Geology and Growth, and Mechanical and Industrial Engineering, with an emphasis on the following:
Journal ArticleDOI

Properties of filtered-ion-beam-deposited diamondlike carbon as a function of ion energy

TL;DR: Data are found to support deposition models in which the highly tetrahedrally bonded form on nonhydrogenated amorphous carbon arises from the subplantation of incident ions, giving rise to a quenched increase in density and strain.
Journal ArticleDOI

Stresses and deformation processes in thin films on substrates

TL;DR: In this paper, the stresses that develop in thin films on substrates can be detrimental to the reliability of thin film electronic devices, in order to design these devices for improved mechanical reliability, an...
Journal ArticleDOI

Subplantation model for film growth from hyperthermal species: Application to diamond.

TL;DR: In this paper, a model for diamond film growth from hyperthermal ions impinging on substrates is proposed, which includes subsurface implantation, energy loss, preferential displacement of atoms with low displacement energies, leaving high atoms undisplaced, and sputtering of substrate material.
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