Two-color infrared photodetector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells

TLDR: In this article, a two-color infrared detector using GaAs/AlGaAs and strained InGaAs/alGaAs multiquantum wells is demonstrated, and the response peak of the two-colour detector is at 8 μm.

Abstract: A two‐color infrared detector using GaAs/AlGaAs and strained InGaAs/AlGaAs multiquantum wells is demonstrated. The response peak of the GaAs/AlGaAs quantum well is at 8 μm, and that of the InGaAs/AlGaAs quantum well is at 5.3 μm. The responsivity of the detector is 1 A/W at 8 μm and 0.27 A/W at 5.3 μm; these are the best values reported for a two‐color quantum well infrared detectors (QWIPs) with peak sensitivities in the spectral regions of 3–5.3 μm and 7.5–14 μm. Single‐colored 5.3 and 8 μm QWIPs were also fabricated to study the bias dependent behavior. This behavior can be explained using the concept of current continuity. Because of a higher electrical resistance, a high electric field domain is always formed first in the shorter wavelength quantum well stack.