Journal ArticleDOI
Ultralow Current Switching in Flexible Hybrid PVP:MoS 2 /HfO x Bilayer Devices
TLDR
In this article, an ultralow power consuming and forming-free hybrid flexible resistive random access memory device fabricated with poly(4-vinylphenol) (PVP):MoS2 composite and HfO x bilayer.Abstract:
We report an ultralow power consuming and forming-free hybrid flexible resistive random access memory device fabricated with poly(4-vinylphenol) (PVP):MoS2 composite and HfO x bilayer, exhibiting threshold switching with ultralow ON-current of 500 nA. While the higher concentration of MoS2 imparted the higher leakage current in the devices, the lower concentration devices exhibited decent switching with set and reset powers as low as 270 and 0.1 nW, respectively. The ultralow switching current indicates the formation of multiple weak nanosized conductive filaments created due to electromigration of Ag atoms under external bias. Moreover, heating temperature-dependent study of switching behavior confirms the metallic nature of the filament as the low resistance state (LRS) current falls significantly with rising temperature. Furthermore, these devices exhibited remarkable mechanical strength on flexible substrate with demonstration of nondestructive switching characteristics at a bending radius as low as 2.5 mm and after 100 consecutive compressive and tensile strain cycles at ±5-mm radius. The ultralow switching current with high flexibility indicates the capability of devices for advancement toward future low-power flexible memories and computing systems.read more
Citations
More filters
Journal ArticleDOI
Bipolar resistive switching properties of TiO x /graphene oxide doped PVP based bilayer ReRAM
TL;DR: In this paper , the bipolar resistive switching behavior of a 2D material such as Graphene Oxide (GO):poly(4-vinylphenol) (PVP) based bilayer in ReRAM devices is demonstrated.
Journal ArticleDOI
Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor
Tangyou Sun,Hui Juan Shi,Shuai Gao,Zhiping Zhou,Zhiqiang Yu,Wenjing Guo,Haiou Li,Fabi Zhang,Zhimou Xu,Xiaowen Zhang +9 more
TL;DR: In this paper , the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS2) with different mixing ratios was investigated.
Journal ArticleDOI
Ovonic threshold switching device and its application to logic gate function and steep slope in field effect transistors
TL;DR: In this paper , the poly(p-vinylphenol) (PVP)-based ovonic threshold switching devices were used in the design of logic gates to realize the function of AND and OR.
Journal ArticleDOI
Resistive switching behavior of TiO2/(PVP:MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices
Journal ArticleDOI
Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications
Lingzhi Tang,Yang Huang,Chen Wang,Zhen Xuan Zhao,Yiming Yang,Jiming Bian,Huaqiang Wu,Zengxing Zhang,David Wei Zhang +8 more
TL;DR: In this paper , a halide perovskite based flexible threshold-switched memristor with ultra-high speed was used as an artificial neuron that exhibits excellent leaky integrate-and-fire dynamics and strength-modulated spike frequency response performance.
References
More filters
Journal ArticleDOI
Photocatalytic Reduction of Graphene Oxide-TiO2 Nanocomposites for Improving Resistive-Switching Memory Behaviors.
Xiaoning Zhao,Zhongqiang Wang,Yu Xie,Haiyang Xu,Jiaxue Zhu,Xintong Zhang,Weizhen Liu,Guochun Yang,Jiangang Ma,Yichun Liu +9 more
TL;DR: Experimental results evidence that the combined advantages of reducing the oxygen-migration barrier and enhancing the local-electric-field with RGO-manipulation are responsible for the improved RS behaviors.
Journal ArticleDOI
Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition.
Byung Chul Jang,Hyejeong Seong,Sungkyu Kim,Jong Yun Kim,Beom Jun Koo,Junhwan Choi,Sang Yoon Yang,Sung Gap Im,Sung-Yool Choi +8 more
TL;DR: The pV3D3-RRAM arrays fabricated via the solvent-free technique called initiated chemical vapor deposition (iCVD) process for flexible memory application showed unipolar resistive switching memory with an on/off ratio of over 10(7), stable retention time for 10(5) s, excellent cycling endurance over 10 (5) cycles, and robust immunity to mechanical stress.
Journal ArticleDOI
Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects
TL;DR: In this article, the main methods developed to fabricate FETs with 2D semiconducting channels are presented, and their scalability and compatibility with the requirements imposed by the semiconductor industry are discussed.
Journal ArticleDOI
Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory
TL;DR: In this paper, reversible alternation between bipolar and unipolar resistive switching (RS) modes was observed by controlling voltage-polarity in Ag/MoS2/Au memory on polyethylene terephthalate (PET) substrate.
Journal ArticleDOI
Transient and flexible polymer memristors utilizing full-solution processed polymer nanocomposites.
Zhe Zhou,Huiwu Mao,Xiangjing Wang,Tao Sun,Qing Chang,Yingying Chen,Fei Xiu,Zhengdong Liu,Juqing Liu,Wei Huang,Wei Huang,Wei Huang +11 more
TL;DR: A transient and flexible memristor based on a polymer nanocomposite, with a configuration of silver nanowire)/citric acid quantum dot)-polyvinyl pyrrolidone (PVP)/AgNW, is fabricated using a full-solution process method, indicating outstanding memory characteristics such as low misreading, low power operation and low cost potential.