Journal ArticleDOI
Ultralow Current Switching in Flexible Hybrid PVP:MoS 2 /HfO x Bilayer Devices
TLDR
In this article, an ultralow power consuming and forming-free hybrid flexible resistive random access memory device fabricated with poly(4-vinylphenol) (PVP):MoS2 composite and HfO x bilayer.Abstract:
We report an ultralow power consuming and forming-free hybrid flexible resistive random access memory device fabricated with poly(4-vinylphenol) (PVP):MoS2 composite and HfO x bilayer, exhibiting threshold switching with ultralow ON-current of 500 nA. While the higher concentration of MoS2 imparted the higher leakage current in the devices, the lower concentration devices exhibited decent switching with set and reset powers as low as 270 and 0.1 nW, respectively. The ultralow switching current indicates the formation of multiple weak nanosized conductive filaments created due to electromigration of Ag atoms under external bias. Moreover, heating temperature-dependent study of switching behavior confirms the metallic nature of the filament as the low resistance state (LRS) current falls significantly with rising temperature. Furthermore, these devices exhibited remarkable mechanical strength on flexible substrate with demonstration of nondestructive switching characteristics at a bending radius as low as 2.5 mm and after 100 consecutive compressive and tensile strain cycles at ±5-mm radius. The ultralow switching current with high flexibility indicates the capability of devices for advancement toward future low-power flexible memories and computing systems.read more
Citations
More filters
Journal ArticleDOI
Bipolar resistive switching properties of TiO x /graphene oxide doped PVP based bilayer ReRAM
TL;DR: In this paper , the bipolar resistive switching behavior of a 2D material such as Graphene Oxide (GO):poly(4-vinylphenol) (PVP) based bilayer in ReRAM devices is demonstrated.
Journal ArticleDOI
Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor
Tangyou Sun,Hui Juan Shi,Shuai Gao,Zhiping Zhou,Zhiqiang Yu,Wenjing Guo,Haiou Li,Fabi Zhang,Zhimou Xu,Xiaowen Zhang +9 more
TL;DR: In this paper , the interaction between polyvinyl alcohol (PVA) and two-dimensional material molybdenum disulfide (MoS2) with different mixing ratios was investigated.
Journal ArticleDOI
Ovonic threshold switching device and its application to logic gate function and steep slope in field effect transistors
TL;DR: In this paper , the poly(p-vinylphenol) (PVP)-based ovonic threshold switching devices were used in the design of logic gates to realize the function of AND and OR.
Journal ArticleDOI
Resistive switching behavior of TiO2/(PVP:MoS2) nanocomposite hybrid bilayer in rigid and flexible RRAM devices
Journal ArticleDOI
Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications
Lingzhi Tang,Yang Huang,Chen Wang,Zhen Xuan Zhao,Yiming Yang,Jiming Bian,Huaqiang Wu,Zengxing Zhang,David Wei Zhang +8 more
TL;DR: In this paper , a halide perovskite based flexible threshold-switched memristor with ultra-high speed was used as an artificial neuron that exhibits excellent leaky integrate-and-fire dynamics and strength-modulated spike frequency response performance.
References
More filters
Journal ArticleDOI
Resistive Switching in All-Printed, Flexible and Hybrid MoS 2 -PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset.
Muhammad Muqeet Rehman,Ghayas Uddin Siddiqui,Jahan Zeb Gul,Soo Wan Kim,Jong Hwan Lim,Kyung Hyun Choi +5 more
TL;DR: The fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage.
Journal ArticleDOI
Overview of Resistive Random Access Memory (RRAM): Materials, Filament Mechanisms, Performance Optimization, and Prospects
Journal ArticleDOI
A two-dimensional hexagonal boron nitride/polymer nanocomposite for flexible resistive switching devices
TL;DR: In this article, the memory effect in a device, based on a 2D material: boron nitride (BN) and a polymer, polyvinyl alcohol (PVOH), was explored.
Journal ArticleDOI
Multilevel Ultrafast Flexible Nanoscale Nonvolatile Hybrid Graphene Oxide–Titanium Oxide Memories
V. Karthik Nagareddy,Matthew D. Barnes,Federico Zipoli,Khue T. Lai,A. M. Alexeev,Monica F. Craciun,C. David Wright +6 more
TL;DR: This work presents not only the smallest (50 nm), fastest (sub-5 ns), thinnest (8 nm) GO-based memory devices produced to date, but also demonstrates that the approach provides easily accessible multilevel storage capabilities along with excellent endurance and retention performance-all on both rigid and flexible substrates.
Journal ArticleDOI
Highly selective and reversible NO2 gas sensor using vertically aligned MoS2 flake networks.
TL;DR: The VA-MoS2 gas sensor exhibited high response with good reversibility and selectivity towards NO2 as a result of the high aspect ratio as well as high adsorption energy on exposed edge sites.