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Uniform, Axial-Orientation Alignment of One-Dimensional Single-Crystal Silicon Nanostructure Arrays†

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This article is published in Angewandte Chemie.The article was published on 2005-04-29. It has received 473 citations till now. The article focuses on the topics: Hybrid silicon laser & Nanostructure.

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Citations
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Enhanced thermoelectric performance of rough silicon nanowires

TL;DR: In this article, the authors report the electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20-300 nm in diameter.
Journal Article

Enhanced Thermoelectric Performance in Rough Silicon Nanowires

TL;DR: Electrochemical synthesis of large-area, wafer-scale arrays of rough Si nanowires that are 20–300 nm in diameter show promise as high-performance, scalable thermoelectric materials.
Journal ArticleDOI

Metal-Assisted Chemical Etching of Silicon: A Review

TL;DR: This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching, and introduces templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithographic, and block-copolymer masks.
Journal ArticleDOI

Silicon-based Nanomaterials for Lithium-Ion Batteries - A Review

TL;DR: In this article, the most recent advance in the applications of 0D (nanoparticles), 1D(nanowires and nanotubes), and 2D (thin film) silicon nanomaterials in lithium-ion batteries are summarized.
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Semiconductor nanowires for energy conversion.

TL;DR: It is discovered that the thermoconductivity of the silicon nanowires can be significantly reduced due to phonon scattering, pointing to a very promising approach to design better thermoelectrical materials.
References
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Journal ArticleDOI

A laser ablation method for the synthesis of crystalline semiconductor nanowires

TL;DR: Studies carried out with different conditions and catalyst materials confirmed the central details of the growth mechanism and suggest that well-established phase diagrams can be used to predict rationally catalyst materials and growth conditions for the preparation of nanowires.
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Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

TL;DR: The assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping are reported, and electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.
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Functional nanoscale electronic devices assembled using silicon nanowire building blocks.

TL;DR: The facile assembly of key electronic device elements from well-defined nanoscale building blocks may represent a step toward a "bottom-up" paradigm for electronics manufacturing.
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Single-nanowire electrically driven lasers

TL;DR: In this paper, the authors investigate the feasibility of achieving electrically driven lasing from individual nanowires and show that these structures can function as Fabry-Perot optical cavities with mode spacing inversely related to the nanowire length.
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Thermal conductivity of individual silicon nanowires

TL;DR: The thermal conductivities of individual single crystalline intrinsic Si nanowires with diameters of 22, 37, 56, and 115 nm were measured using a microfabricated suspended device over a temperature range of 20-320 K as discussed by the authors.
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