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Patent

Use of multiple laser sources for rapid, flexible machining and production of vias in multi-layered substrates

TLDR
In this paper, a laser via drilling system, and a method of use thereof, is provided, where the output beams from the independently controlled laser systems are combined using a beam splitter that combines the beams into single or multiple processing beams.
Abstract
A laser via drilling system, and a method of use thereof, is provided. The apparatus uses two or more laser systems to achieve processing parameter flexibility. The output beams from the independently controlled laser systems are combined using a beam splitter that combines the beams into single or multiple processing beams. The operational flexibility of the system can be further enhanced through the use of multiple EO modulators and a polarization sensitive beam splitter.

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Citations
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Link processing with high speed beam deflection

TL;DR: In this article, a deflector is used for non-orthogonal scanning of beam spots and non-synchronous processing of target structures in laser processing multi-material devices.
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Drop discharge apparatus, method for forming pattern and method for manufacturing semiconductor device

TL;DR: In this paper, a method for forming a pattern, which is capable of improving position control after a drop, which was discharged from a drop discharge apparatus, was landed on a substrate.
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TL;DR: In this paper, a first laser output was applied to the material, and then a second laser was used to singulate the material in such a way that surfaces created by the singulation of the material were substantially free from defects.
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Pulsed laser processing with controlled thermal and physical alterations

TL;DR: In this paper, a method for laser machining of material using a burst comprised of laser pulses was proposed, which tailors the pulse width, pulse separation duration, wavelength and polarization of multiple laser pulses included in a burst to maximize the positive effect of thermal and physical changes achieved by previous pulses that have impinged upon the machined material.
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Method For Producing a Hole

TL;DR: In this paper, a multiplicity of methods of making through-holes are presented, and the method according to the invention, to make the hole close to the final contour in each case in sections in a top and a bottom region, achieves time advantages.
References
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Patent

Ultraviolet laser system and method for forming vias in multi-layered targets

TL;DR: In this paper, the output of a continuously pumped, Q-switched, Nd:YAG laser (10) is frequency converted to provide ultraviolet light for forming vias (72, 74) in multi-layered targets (40).
Patent

Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets

TL;DR: In this article, the output of a continuously pumped, Q-switched, Nd:YAG laser is converted to provide ultraviolet light for forming vias in targets (40) having metallic layers (64,68) and a dielectric layer (66).
Patent

Dental procedures and apparatus using ultraviolet radiation

TL;DR: In this paper, the authors proposed an improved dental procedure and apparatus where ultraviolet radiation pulses are used to etch selectively both hard tissue and soft tissue in dental procedures, where there exists distinct ablation thresholds for hard and soft tissues which are dependent on the material being ablated for a given wavelength of the ultraviolet radiation.
Patent

Low cost, high average power, high brightness solid state laser

TL;DR: In this article, a seed laser beam with a short pulse duration was used to produce a high average power, high brightness solid state laser system, where a laser amplifier (24) amplifies the seed beam to produce an amplified pulse laser beam which is tightly focused to produce pulses with brightness levels in excess of 1011 Watts/cm2.
Patent

Laser system and method for plating vias

TL;DR: The output of a continuously pumped, Q-switched, Nd:YAG laser is frequency converted to provide ultraviolet light for plating internal wall surfaces (79, 126) of vias in multilayered electronic devices as mentioned in this paper.
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