Proceedings ArticleDOI
Wide-band gap devices in PV systems - opportunities and challenges
C. Sintamarean,Emanuel-Petre Eni,Frede Blaabjerg,Remus Teodorescu,Huai Wang +4 more
- pp 1912-1919
TLDR
In this paper, a comparison study between a Si-based 3L-Diode Neutral Point Clamped (DNPC) and a SiC-based 2L-Full Bridge (FB) three-phase PV-inverter topologies in terms of efficiency, thermal loading distribution and costs was conducted.Abstract:
The recent developments in wide band-gap devices based GaN and SiC is showing a high impact on the PV-inverter technology, which is strongly influenced by efficiency, power density and cost. Besides the high efficiency of PV inverters, also the mechanical size, the compactness and simple structure have an important role in the cost reduction. To increase the efficiency of PV systems, most of solutions for PV inverters have moved to three-level (3L) structures reaching typical efficiencies of 98% due to low switching losses of 600V Si IGBT or MOSFET and reduced core losses in the filter. With the appearance of SiC 1200V MOSFETs, it becomes possible to return to more simple two-level (2L) structure with comparable efficiency but high potential to reduce the overall cost. This paper deals with a comparison study between a Si-based 3L-Diode Neutral Point Clamped (DNPC) and a SiC-based 2L-Full Bridge (FB) three-phase PV-inverter topologies in terms of efficiency, thermal loading distribution and costs. Moreover the above mentioned PV-inverters are built and tested in laboratory in order to validate the obtained results.read more
Citations
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Journal ArticleDOI
Comparative Life Cycle Cost Analysis of Si and SiC PV Converter Systems Based on Advanced $\eta$- $\rho$-$\sigma$ Multiobjective Optimization Techniques
Ralph M. Burkart,Johann W. Kolar +1 more
TL;DR: In this article, the authors present a virtual prototyping routine for power electronic converter systems, which facilitates a comprehensive and systematic benchmarking of different converter concepts based on a multiobjective optimization regarding the efficiency, power density, and costs.
Proceedings ArticleDOI
Application of wide bandgap devices in renewable energy systems — Benefits and challenges
TL;DR: In this article, the performance benefits and application challenges of using wide bandgap (WBG) devices in both photovoltaic (PV) and wind energy conversion systems are analyzed.
Proceedings ArticleDOI
Wide bandgap semiconductor opportunities in power electronics
TL;DR: In this article, the authors present market, value chain and energy savings potential analyses for several major application areas: data centers (uninterruptable power supplies (UPS) and server power supply units (PSU), renewable power generation (Photovoltaic (PV)-solar and wind), motor drives, rail traction, and hybrid/electric vehicles.
DissertationDOI
Advanced Modeling and Multi-Objective Optimization of Power Electronic Converter Systems
TL;DR: In this article, a multobjective optimization and comprehensive comparison of power electronic converter systems regarding achievable efficiency, volume, weight, and costs is presented, and a modeling framework is established which allows for the assessment of typical converter components such as semiconductors, inductors, capacitors, cooling systems and printed circuit boards.
Journal ArticleDOI
The Effect of Inverter Failures on the Return on Investment of Solar Photovoltaic Systems
TL;DR: This paper’s analysis of failure data shows that the short warranties and reliability concerns associated with solar PV inverters reduce the long-term ROI of residential solar PV systems by up to 10%.
References
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Proceedings ArticleDOI
Power electronics and reliability in renewable energy systems
Frede Blaabjerg,Ke Ma,Dao Zhou +2 more
TL;DR: An overview on the power electronic circuits behind the most common converter configurations for wind turbine and photovoltaic is done and examples of how to control the chip temperature in different power electronic configurations as well as operation modes for wind power generation systems are given in order to reduce the temperature cycling.
Proceedings ArticleDOI
Performance comparison of 1200V 100A SiC MOSFET and 1200V 100A silicon IGBT
TL;DR: In this paper, the authors present the characteristics of the first commercial 1200V 100A SiC MOSFET module and compare it with state-of-the-art silicon IGBT with the same rating.
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