Journal ArticleDOI
X‐ray diffraction study of gallium nitride grown by MOCVD
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TLDR
An X-ray diffraction study of gallium nitride grown on the c-plane and r-plane of sapphire substrates by metal organic chemical vapour deposition using triethylgallium and ammonia was performed by measuring asymmetric reflections with a ω-2θ two-circle diffractometer.Abstract:
An X-ray diffraction study of gallium nitride grown on the c-plane (0001) and r-plane (0112) of sapphire substrates by metal organic chemical vapour deposition using triethylgallium and ammonia was performed. By measuring asymmetric reflections with a ω-2θ two-circle diffractometer, lattice constants of α-GaN could be resolved for both substrate orientations and the epitaxial relationships could be confirmed. Additionally, the existence of β-GaN on the r-plane sapphire substrate could be deterimined. Pole figure measurements show different qualities of in-plane orientation of the α-GaN layers for the two substrate orientations.read more
Citations
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Journal ArticleDOI
Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
TL;DR: In this paper, structural characteristics of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire substrates via metalorganic chemical vapor deposition were described.
Patent
Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
Arpan Chakraborty,Benjamin A. Haskell,Stacia Keller,James S. Speck,Steven P. DenBaars,Shuji Nakamura,Umesh K. Mishra +6 more
TL;DR: In this paper, a method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as non-polar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD) is presented.
Patent
Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
TL;DR: In this article, a method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films is proposed for a significant reduction in structural defect densities via a lateral overgrowth technique.
Patent
Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy
Benjamin A. Haskell,Michael D. Craven,Paul T. Fini,Steven P. DenBaars,James S. Speck,Shuji Nakamura +5 more
Abstract: Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.
Patent
Method for heteroepitaxial growth of high-quality n-face gan, inn, and ain and their alloys by metal organic chemical vapor deposition
TL;DR: In this article, a method for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD is described.
References
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Journal ArticleDOI
GaN Growth Using GaN Buffer Layer
TL;DR: In this paper, the authors used a GaN buffer layer on a sapphire substrate to obtain an optically flat and smooth surface for gallium nitride (GaN) films.
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Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
TL;DR: In this article, a thin AIN buffer layer was proposed to reduce the microscopic fluctuation in crystallite orientation and improve the crystalline quality of the GaN and Ga 1−x Al x N (0 x ≦ 0.4) films.
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Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties
TL;DR: In this paper, a combination of in situ reflection high-energy electron diffraction, double-crystal x-ray diffraction and cross-sectional transmission electron microscopy was used to determine the film/substrate epitaxial relationships.
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III-V nitrides for electronic and optoelectronic applications
TL;DR: In this article, a review of recent developments in III-V nitride thin-film materials for electronic and optoelectronic applications is presented. But, the lack of a suitable substrate, with the possible exception of SiC for AlN, is a problem of considerable magnitude and is compounded by the presence of shallow donor bands in GaN and InN which are apparently caused by N vacancies.
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Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy
TL;DR: In this paper, the growth of cubic phase single-crystal thin-film GaN using a modified molecular-beam epitaxy technique was reported, but to activate nitrogen gas prior to deposition, a microwave glow discharge was used.