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At millikelvin temperatures, position resolution a factor of 4.3 above the quantum limit is achieved and demonstrates the near-ideal performance of the single-electron transistor as a linear amplifier.
The instability of the amplifier can be mitigated by tuning the base bias voltage of the shunt transistor pair.
It is also found that the maximum allowed deviation in amplifier gain due to on-wafer process parameter derivations when high Q-values and a stable filter gain are required is very small, even if an automatic Q-controlling system is included.
The results of this study indicate that even within the relatively narrow low-qψ operating space, there is a continuum in the characteristics of the low-q^ disruptions with a primary dependence on the value of βt.
Experimental results show that such a class of amplifiers that use only one transistor provides a higher transmission gain and a smaller noise figure than a conventional single-stage amplifier, making it interesting to operate at millimeter-wave frequencies.
Journal ArticleDOI
01 Dec 2000
11 Citations
In the paper, a new bandpass amplifier has been proposed which can achieve the required Q without an additional Q-enhancement circuit.
Proceedings ArticleDOI
Fang Liu, P.K. Nikolov, Sule Ozev 
30 Apr 2006
27 Citations
Experiments on a transistor level amplifier circuit confirms that the approach is accurate in terms of statistical attributes and most deviations in layout and process level parameters can be correctly diagnosed.
The gain-per-stage of the amplifier is amongst the highest reported in any transistor technology in this frequency band.
This has facilitated a wider range of resistances in the measurement circuit around the transistor than is possible when using a voltage amplifier for the same kind of measurements.

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