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Journal ArticleDOI
01 Nov 1952
51 Citations
A simplified circuit is obtained which can be used when the p-n-p-n transistor is connected as a hook-collector transistor.
Experimental results show that the current gain degradation of the NPN transistors is sensitive to both of ionization and displacement damage.
Thus, the TBJ can also be used as a transistor.
It can be used for design of nanotube transistor circuits as well as to study performance benefits of the new transistor.
It can be equivalently regarded as parallel connection of an incorporated PNPN SCR part and an NPN BJT part.
Journal ArticleDOI
H. Beneking, L.M. Su, F. Ponse 
8 Citations
The NpN transistor can be operated in bi-direction with comparable current gain due to the wide gap emitter principle and the symmetry of the emitter-base and collector-base heterojunctions.
It allows, for the first time, characterization of each bit transistor in a functional SRAM.
It is able to obtain transistor networks with transistor count near to the best case of other methods presented in the literature.
These data indicate that previously reported analyses, which lead to a linear dependence of common‐base current‐gain on fast neutron exposure, yield a good approximation for the npn device, but are not of general validity for the pnp germanium transistor.