Showing papers on "Chemical bath deposition published in 2004"
TL;DR: In this paper, the room-temperature bandgap energies for each sample were determined from the transmittance by two different methods: extrapolating absorption coefficient and first derivative peak position.
188 citations
TL;DR: A mechanism of the formation of the nest-like morphology was discussed based on nonaqueous solution reactions, nucleation, and crystal growth during the CBD process.
184 citations
TL;DR: In this paper, the formation of a Ti-Zr based conversion layer on AA6060 aluminium has been studied electrochemically and by use of various surface analytical methods, and it has been shown that the α-Al(Fe,Mn)Si particles present in AA 6060 are cathodic to the aluminium matrix in a fluorotitanate-zirconate (H 2 TiF 6 −H 2 ZrF 6 ) based solution, and reduction reactions occur predominantly on the particles.
Abstract: Formation of a Ti–Zr based conversion layer on AA6060 aluminium has been studied electrochemically and by use of various surface analytical methods. Measurements show that the α-Al(Fe,Mn)Si particles present in AA6060 are cathodic to the aluminium matrix in a fluorotitanate–zirconate (H 2 TiF 6 –H 2 ZrF 6 ) based solution, and reduction reactions occur predominantly on the particles. The alkaline diffusion layer thus formed causes preferential deposition of a hydrated Ti and Zr oxide covering the particles and surrounding areas, eventually leading to a conversion layer with significant variations in thickness. In addition to substrate metallurgy, agitation and pH of the conversion bath are factors that significantly control the conversion layer deposition. The conversion layers formed cause only a small reduction in the cathodic activity of the α-Al(Fe,Mn)Si particles and do not impart improved corrosion resistance of the AA6060 alloy in chloride solution.
139 citations
TL;DR: In this article, Cadmium selenide nano-crystallites are grown onto amorphous glass substrate from an aqueous alkaline medium, using chemical bath deposition method at room temperature.
138 citations
TL;DR: In this article, chemical bath deposition (CBD) and successive ionic layer adsorption and reaction (SILAR) have been used to deposit wide band gap p-type CuI and CuSCN thin films at room temperature (25 °C) in aqueous medium.
101 citations
TL;DR: In this article, X-Ray diffraction, photoluminescence (PL), and Raman techniques were used to evaluate the quality of B-doped CdS films.
92 citations
TL;DR: In this paper, the optical, structural, and morphological properties of chemical bath deposited CdS films have been investigated, and it has been shown that the CcS film has good morphology and its optical property in the visible region is compliant to the requirements of solar cells.
88 citations
TL;DR: In this paper, the development of a ZnS(O,OH) buffer layer that enabled to obtain high-efficiency devices using a single-layer CBD was reported, which could potentially replace CdS in the CIGS solar cell.
82 citations
TL;DR: Tin selenide thin films have been deposited on indium tin oxide glass slides in alkaline medium as discussed by the authors, which is based on simple bath deposition technique that requires less chemicals and monitoring.
Abstract: Tin selenide thin films have been deposited on indium tin oxide glass slides in alkaline medium. The method is based on simple bath deposition technique that requires less chemicals and monitoring. Uniform and well-adhered films were obtained upon required deposition period. X-ray, morphology, optical and photoelectrochemical study was carried out for the as-deposited film. The films were polycrystalline and covered the surface of the substrate completely. Photoelectrochemical test shows a p-type conduction mechanism. The band gap was found to be about 1.25 eV with direct transition.
76 citations
TL;DR: In this paper, the authors improved the rate of deposition, uniformity of deposited film, stoichiometry, refractive index and the percentage of reflection, respectively, by proper optimization of molar percentage of different CBD ZnS bath chemical constituents and deposition conditions.
74 citations
TL;DR: In this article, a 10min deposition of nanocrystalline films was carried out at 100°C for 10min with precursors of CdSO4, SeO2 and H2SO4.
TL;DR: In this article, a hexagonal phase with a preferential (0, 0, 2) orientation was found in Cadmium sulfide (CdS) films of different thicknesses.
TL;DR: In this paper, the authors have taken advantage of the control of strains at the CdS films-substrate interfaces to obtain films with tunable energy band gap, and they have shown that on decreasing the amount of strain at the layer-to-glass substrate interface, the energy bands gap of the films also decreases.
TL;DR: In this article, ZnO thin films have been deposited by chemical bath deposition (CBD-ZnO) to achieve the deposition of porous, but adherent, thin films.
Abstract: ZnO thin films have been deposited by chemical bath deposition (CBD-ZnO). The deposition conditions, i.e. the pH and the temperature of the bath, have been adjusted to achieve the deposition of porous, but adherent, thin films. After annealing in air half an hour at 300 °C ZnO films crystallized in the hexagonal structure are obtained. They are nearly stoichiometric with a slight oxygen deficiency. The films are porous and the grains are columnar, which allows achieving films with large surface area. The films are semi-conductor with a n-type conductivity. It is shown that the grain boundary influence on the conductivity is stronger in longitudinal than in transversal structures. In the latter case the barrier height is nearly homogeneous. Such films deposited on ITO have been used in micro-structured solar cells with configuration ITO/ZnO/absorbent/aluminum. The absorbent used was an organic layer of zinc-phthalocyanine or a blend of poly(N-vinylcarbazole):diaminoanthraquinone. A photovoltaic effect has been achieved. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
TL;DR: In this article, the composition, optical properties, structure properties, and surface morphology of thin films of Cd 1-x Zn x S (x ≤ 10%) prepared by chemical bath deposition (CBD) are reported.
Abstract: Composition, optical properties, structure properties, and surface morphology of thin films of Cd 1-x Zn x S (x ≤ 10%) prepared by chemical bath deposition (CBD) are reported. The best cell efficiency was 15.7%. It used a Cd 1-x Zn x S window layer, was confirmed by NREL (V oc = 840.1 mV, J sc = 24.81 mA/cm2, and FF = 75.55%), and had a CTO/ZTO/Cd 0.92 Zn 0.08 S/CdTe cell structure. The use of low zinc concentration in the Cd 1-x Zn x S layer and interdiffusion between Cd 1-x Zn x S and CdTe layers were assumed to be the reasons for maintaining high V oc and FF.
TL;DR: In this article, a modified chemical bath deposition method was developed to prepare CdSe and HgSe semiconductor thin films in cubic modification, based on the chemical reaction of complexed cadmium acetate, mercuric nitrate with sodium selenosulphate in an aqueous ammoniacal medium at 5 °C.
Abstract: A modified chemical bath deposition method has been developed to prepare CdSe and HgSe semiconductor thin films in cubic modification, based on the chemical reaction of complexed cadmium acetate, mercuric nitrate with sodium selenosulphate in an aqueous ammoniacal medium at 5 °C. The films were characterized by using x-ray diffraction, optical absorption, electrical measurements and energy dispersive x-ray analysis techniques. The films were uniform, well adherent, dark red and polycrystalline in cubic form without trace of any hexagonality. The CdSe film shows two bandgaps at 2.15 and 1.86 eV, while HgSe shows two bandgaps at 0.8 and 0.45 eV. A thermoelectric study indicated the presence of an n-type conduction mechanism.
TL;DR: In this article, the properties of chemically deposited CdS thin films in a cadmium-sodium citrate system were determined from X-ray diffraction, optical transmission and reflection spectroscopy and scanning electron microscopy measurements.
TL;DR: In this article, the directional growth of CdS nanotubes is verified by scanning electron microscopy (SEM) and high-resolution TEM (HRTEM).
TL;DR: In this article, a simple chemical method was developed for the deposition of ZnO films from aqueous solution, integrating the merits of successive ionic layer adsorption and reaction with the chemical bath deposition technology.
TL;DR: In this article, a new route to obtain cadmium sulfide thin films by using ethylene-diamine-tetra-acetic acid (EDTA) ligand on the chemical bath deposition (CBD) method is reported.
Abstract: Progress is reported towards the development of a new route to obtain cadmium sulfide (CdS) thin films by using ethylene-diamine-tetra-acetic acid (EDTA) ligand on the chemical bath deposition (CBD) method. Different chemical baths are used to study changes in the structures of the CdS films for different EDTA concentrations. X-ray diffraction (XRD) is used to prove the structural characterization of the samples, and to obtain the grain size with the Scherrer’s equation. The pH variations during the growth also affect the structural film quality, and it was verified by using ammonia chloride as an auxiliar-buffer plus Triton-X100.
TL;DR: In this paper, chemical bath deposition of CdS was monitored using a quartz crystal microbalance as a function of time, temperature, reactant concentration (ex situ atomic absorption measurement), and pH level.
Abstract: In this work, chemical bath deposition (CBD) of CdS was monitored using a quartz crystal microbalance as a function of time, temperature, reactant concentration (ex situ atomic absorption measurement), and pH level. It is found that the reaction could be limited by mass transport at certain concentrations and temperatures. The measurements also indicate the total Cd concentration in the solution changes dramatically in the linear growth regime with a constant deposition rate. One possible explanation is that the linear growth regime is actually a combination of molecule-by-molecule growth and cluster-by-cluster growth mode. This hypothesis is further supported by real time dynamic light scattering and transmission electron microscopy measurements.
TL;DR: In this paper, a simple chemical deposition method was used to prepare copper indium disulphide thin films, based on sequential immersion of substrate into different cationic and anionic precursor solutions and rinsing before every immersion with double distilled water.
TL;DR: In this paper, a chemical bath deposition system has been modified to obtain precise control over the pH of the solution by adding ammonium sulphate as a complexing agent along with ammonia.
TL;DR: In this paper, the effect of deposition time, temperature and pH on growth of these thin films were studied and the disodium salt of [EDTA] was used as a complexing agent.
TL;DR: In this article, the authors derived the optical constants of CdCr2S4 thin films from the experimental recorded transmission and reflectance spectral data over the wavelength range 300?2500 nm and found that the refractive index and extinction coefficient are almost independent of the film thickness.
Abstract: Reproducible and good quality CdCr2S4 thin films with different thicknesses were deposited on microscopic glass substrates using the chemical bath deposition process. The x-ray and electron diffraction analysis revealed that the as-deposited films were polycrystalline cubic phase. The optical constants of the deposited films were obtained from the analysis of the experimental recorded transmission and reflectance spectral data over the wavelength range 300?2500 nm. It has been found that the refractive index and extinction coefficient are almost independent of the film thickness. The complex dielectric constants of CdCr2S4 films have been calculated in the investigated wavelength range. An analysis of the optical absorption data of the as-deposited films revealed an optical direct transition with the estimation of the corresponding bandgap value. It was found that the refractive index dispersion data obeyed the single oscillator of the Wemple?DiDomenico model, from which the dispersion parameters and the high-frequency dielectric constant were determined. The electric free carrier susceptibility and the carrier concentration to the effective mass ratio were estimated according to the model of Spitzer and Fan.
TL;DR: In this article, the authors report the characterization and analysis of the dc electrical characteristics of thin-film transistors fabricated from low-temperature chemical bath-deposited CdS as the channel layer.
Abstract: In this paper, we report the characterization and analysis of the dc electrical characteristics of thin-film transistors fabricated from low-temperature chemical-bath-deposited CdS as the channel layer. Our analysis shows that the device can be operated either in the depletion mode or in the accumulation mode. In the depletion mode, the channel lies completely within the bulk of the CdS layer. In the accumulation mode, the current is carried by an accumulation channel at the SiO2∕CdS interface and a buried channel that lies in the bulk of the CdS layer. Using our device analysis, we have extracted the threshold voltage, the carrier concentration in CdS, and the carrier mobility in the bulk channel as well as in the surface channel. The extracted value of the surface channel mobility is found to be greater than 1cm2∕Vs, which shows that the CdS deposited by this method has a great promise for applications that require low-temperature processing (e.g., in plastic electronics).
TL;DR: In this article, the synthesis and characterization of some wide band gap semiconducting material thin films prepared by using solution methods, namely, chemical bath deposition and successive ionic layer adsorption and reaction (SILAR), are discussed.
TL;DR: In this paper, highly textured zinc oxide (ZnO) thin films with a preferred (1 0 1) orientation were prepared by chemical bath deposition using a sodium zincate bath on glass substrates.
TL;DR: In this article, the effects of three-dimensional quantum size effects in the optical spectra of chemically deposited cadmium selenide quantum dots (in thin film form) are investigated, including the influence of the coalescence process and crystal growth on these effects.
TL;DR: In this article, Cadmium sulphide (CdS) thin films were deposited by chemical bath deposition (CBD) method on SiO 2 /Si (n-type) substrates.
Abstract: Cadmium sulphide (CdS) thin films were deposited by chemical bath deposition (CBD) method on SiO 2 /Si (n-type) substrates. Approximately, 70 nm thick nano-crystalline CdS layers were obtained. Thin film field effect transistors were realised by deposition of two coplanar electrodes of Au (drain and source) on the CdS surface. The gate contact is aluminium deposited on the backside of the Si substrate. The drain current–drain voltage characteristics ( I d − V d ) were performed in dark. Normal field effect transistor characteristics are obtained in case of positive gate and drain voltages, the device acting as an n-channel transistor in the accumulation mode. For negative drain voltages the characteristic is dominated by space charge limited currents (SCLC). An on/off current ratio of about 10 2 is reported, this being limited in our case by geometry.