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Andras Kis
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 183
Citations - 64866
Andras Kis is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Monolayer & Semiconductor. The author has an hindex of 67, co-authored 165 publications receiving 53990 citations. Previous affiliations of Andras Kis include École Normale Supérieure & Lawrence Berkeley National Laboratory.
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Journal ArticleDOI
Observation of ionic Coulomb blockade in nanopores
Jiandong Feng,Ke Liu,Michael Graf,Dumitru Dumcenco,Andras Kis,Massimiliano Di Ventra,Aleksandra Radenovic +6 more
TL;DR: These findings demonstrate that nanoscopic, atomically thin pores allow for the exploration of phenomena in ionic transport, and suggest that nanopores may also further the understanding of transport through biological ion channels.
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MoS2 and semiconductors in the flatland
Oleg V. Yazyev,Andras Kis +1 more
TL;DR: A short history of research in the synthesis, band properties and potential applications of 2D semiconductors with a particular emphasis on MoS2, the prototypical and best-studied material from this family is presented in this article.
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Beta amyloid and hyperphosphorylated tau deposits in the pancreas in type 2 diabetes
Judith Miklossy,Hong Qing,Aleksandra Radenovic,Andras Kis,Bertrand Vileno,Forró Làszló,Lisa Karen Miller,Ralph N. Martins,Gérard Waeber,Vincent Mooser,Fred T. Bosman,Kamel Khalili,Nune Darbinian,Nune Darbinian,Patrick L. McGeer +14 more
TL;DR: It is concluded that Abeta deposits and hyperphosphorylated tau are also associated with type 2 diabetes, highlighting common pathogenetic features in neurodegenerative disorders, including AD and type 1 diabetes, and suggesting that Abetas deposits andhyperphosphories may also occur in other organs than the brain.
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Logic-in-memory based on an atomically thin semiconductor.
Guilherme Migliato Marega,Yanfei Zhao,Ahmet Avsar,Zhenyu Wang,Mukesh Tripathi,Aleksandra Radenovic,Andras Kis +6 more
TL;DR: This work explores large-area grown MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFET) and highlights the potential of atomically thin semiconductors for the development of next-generation low-power electronics.
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Suppressing Nucleation in Metal-Organic Chemical Vapor Deposition of MoS2 Monolayers by Alkali Metal Halides.
TL;DR: The presence of alkali metal halides suppresses the nucleation and enhances enlargement of domains while resulting in chemically pure MoS2 after transfer, and field-effect measurements in polymer electrolyte-gated devices result in promising electron mobility values close to 100 cm2 V-1 s-1 at cryogenic temperatures.