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Andras Kis

Researcher at École Polytechnique Fédérale de Lausanne

Publications -  183
Citations -  64866

Andras Kis is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: Monolayer & Semiconductor. The author has an hindex of 67, co-authored 165 publications receiving 53990 citations. Previous affiliations of Andras Kis include École Normale Supérieure & Lawrence Berkeley National Laboratory.

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Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy

TL;DR: Using molecular beam epitaxy (MBE) to grow atomically thin MoSe2 on GaAs(111)B, ambipolar transport is achieved in MBE-grown MoSe 2, indicating that the transport is strongly limited by the disorder in the film.
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Electron and Hole Mobilities in Single-Layer WSe2

TL;DR: In this article, a single-layer transition metal dichalcogenide (TMD) WSe2 transistors with a polymer electrolyte gate (PEO:LiClO4) was studied.
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Electromechanical oscillations in bilayer graphene

TL;DR: It is shown that the deflection of monolayer graphene nanoribbons results in a linear increase in their electrical resistance, and oscillations in the electromechanical response of bilayer graphene are observed.
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Defect Healing and Charge Transfer-Mediated Valley Polarization in MoS2/MoSe2/MoS2 Trilayer van der Waals Heterostructures

TL;DR: This work shows that the optical quality of CVD-grown MoSe2 is completely recovered if the material is sandwiched in MoS2/MoSe 2/MoS2 trilayer van der Waals heterostructures, and shows that this remarkable and unexpected result is due to defect healing.
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Probing magnetism in atomically thin semiconducting PtSe2.

TL;DR: The signature of long-range magnetic orderings in defective mono- and bi-layer semiconducting PtSe2 is demonstrated by performing magnetoresistance measurements under both lateral and vertical measurement configurations.